Four different methods for calculating interface state density in vertical SiO2/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO2/SiC interface. Surface state densities from 1011 to 1012 cm-2 eV-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering