Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes

J. R. LaRoche; J. Kim; J. W. Johnson; B. Luo; B. S. Kang; R. Mehandru; Y. Irokawa; S. J. Pearton; G. Chung; F. Ren

doi:10.1149/1.1632872

Comparison of Interface State Density Characterization Methods for SiO ₂/4H-SiC MOS Diodes

J. R. LaRoche, J. Kim, J. W. Johnson, B. Luo, B. S. Kang, R. Mehandru, Y. Irokawa, S. J. Pearton, G. Chung, F. Ren

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16 Citations (Scopus)

Abstract

Four different methods for calculating interface state density in vertical SiO₂/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO₂/SiC interface. Surface state densities from 10¹¹ to 10¹² cm^-2 eV^-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.

Original language	English
Pages (from-to)	G21-G24
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	2
DOIs	https://doi.org/10.1149/1.1632872
Publication status	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes",

abstract = "Four different methods for calculating interface state density in vertical SiO2/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO2/SiC interface. Surface state densities from 1011 to 1012 cm-2 eV-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.",

author = "LaRoche, {J. R.} and J. Kim and Johnson, {J. W.} and B. Luo and Kang, {B. S.} and R. Mehandru and Y. Irokawa and Pearton, {S. J.} and G. Chung and F. Ren",

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doi = "10.1149/1.1632872",

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TY - JOUR

T1 - Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes

AU - LaRoche, J. R.

AU - Kim, J.

AU - Johnson, J. W.

AU - Luo, B.

AU - Kang, B. S.

AU - Mehandru, R.

AU - Irokawa, Y.

AU - Pearton, S. J.

AU - Chung, G.

AU - Ren, F.

PY - 2004

Y1 - 2004

N2 - Four different methods for calculating interface state density in vertical SiO2/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO2/SiC interface. Surface state densities from 1011 to 1012 cm-2 eV-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.

AB - Four different methods for calculating interface state density in vertical SiO2/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO2/SiC interface. Surface state densities from 1011 to 1012 cm-2 eV-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Comparison of Interface State Density Characterization Methods for SiO ₂/4H-SiC MOS Diodes

Abstract

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