Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes

J. R. LaRoche, Ji Hyun Kim, J. W. Johnson, B. Luo, B. S. Kang, R. Mehandru, Y. Irokawa, S. J. Pearton, G. Chung, F. Ren

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Four different methods for calculating interface state density in vertical SiO2/4H-SiC metal-oxide semiconductor (MOS) capacitors were employed on the same samples. The Terman, ac, quasi-static, and Hi-Lo methods were used to extract surface state densities from the SiO2/SiC interface. Surface state densities from 1011 to 1012 cm-2 eV-1 were obtained, depending on the method employed. The Hi-Lo method is particularly susceptible to underestimating the trap density if UV light is not used to empty all the deep-lying traps during measurement.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number2
DOIs
Publication statusPublished - 2004 Apr 8
Externally publishedYes

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Semiconductor diodes
semiconductor diodes
Interface states
Surface states
metal oxide semiconductors
Metals
Ultraviolet radiation
Capacitors
traps
capacitors
Oxide semiconductors

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes. / LaRoche, J. R.; Kim, Ji Hyun; Johnson, J. W.; Luo, B.; Kang, B. S.; Mehandru, R.; Irokawa, Y.; Pearton, S. J.; Chung, G.; Ren, F.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 2, 08.04.2004.

Research output: Contribution to journalArticle

LaRoche, JR, Kim, JH, Johnson, JW, Luo, B, Kang, BS, Mehandru, R, Irokawa, Y, Pearton, SJ, Chung, G & Ren, F 2004, 'Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes', Electrochemical and Solid-State Letters, vol. 7, no. 2. https://doi.org/10.1149/1.1632872
LaRoche, J. R. ; Kim, Ji Hyun ; Johnson, J. W. ; Luo, B. ; Kang, B. S. ; Mehandru, R. ; Irokawa, Y. ; Pearton, S. J. ; Chung, G. ; Ren, F. / Comparison of Interface State Density Characterization Methods for SiO 2/4H-SiC MOS Diodes. In: Electrochemical and Solid-State Letters. 2004 ; Vol. 7, No. 2.
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