Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

B. Luo, Ji Hyun Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. V. Osinsky, P. E. Norris

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

Original languageEnglish
Pages (from-to)1345-1349
Number of pages5
JournalSolid-State Electronics
Volume46
Issue number9
DOIs
Publication statusPublished - 2002 Sep 1
Externally publishedYes

Fingerprint

Ohmic contacts
Heterojunctions
heterojunctions
electric contacts
Negative temperature coefficient
Contact resistance
contact resistance
Electric breakdown
electrical faults
Diodes
diodes
Annealing
Defects
annealing
defects
coefficients
temperature
aluminum gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions. / Luo, B.; Kim, Ji Hyun; Mehandru, R.; Ren, F.; Lee, K. P.; Pearton, S. J.; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Osinsky, A. V.; Norris, P. E.

In: Solid-State Electronics, Vol. 46, No. 9, 01.09.2002, p. 1345-1349.

Research output: Contribution to journalArticle

Luo, B, Kim, JH, Mehandru, R, Ren, F, Lee, KP, Pearton, SJ, Polyakov, AY, Smirnov, NB, Govorkov, AV, Kozhukhova, EA, Osinsky, AV & Norris, PE 2002, 'Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions', Solid-State Electronics, vol. 46, no. 9, pp. 1345-1349. https://doi.org/10.1016/S0038-1101(02)00066-7
Luo, B. ; Kim, Ji Hyun ; Mehandru, R. ; Ren, F. ; Lee, K. P. ; Pearton, S. J. ; Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Osinsky, A. V. ; Norris, P. E. / Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions. In: Solid-State Electronics. 2002 ; Vol. 46, No. 9. pp. 1345-1349.
@article{ffb824cb552c4e6e8c34804c18f6a711,
title = "Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions",
abstract = "GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.",
author = "B. Luo and Kim, {Ji Hyun} and R. Mehandru and F. Ren and Lee, {K. P.} and Pearton, {S. J.} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Osinsky, {A. V.} and Norris, {P. E.}",
year = "2002",
month = "9",
day = "1",
doi = "10.1016/S0038-1101(02)00066-7",
language = "English",
volume = "46",
pages = "1345--1349",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

AU - Luo, B.

AU - Kim, Ji Hyun

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Osinsky, A. V.

AU - Norris, P. E.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

AB - GaN/SiC and Al0.25Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 °C for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10-6 Ωcm2 range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample, with value ∼5.5 ± 2.5 × 10-3 V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states.

UR - http://www.scopus.com/inward/record.url?scp=0036721684&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036721684&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00066-7

DO - 10.1016/S0038-1101(02)00066-7

M3 - Article

AN - SCOPUS:0036721684

VL - 46

SP - 1345

EP - 1349

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -