Comparison of passivation property on hydrogenated silicon nitrides whose antireflection properties are identical

Jae Eun Kim, Kyung Dong Lee, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Silicon nitride (SiNx:H) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. The passivation properties of SiNx:H are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitancevoltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

Original languageEnglish
Pages (from-to)47-53
Number of pages7
JournalKorean Journal of Materials Research
Volume26
Issue number1
DOIs
Publication statusPublished - 2016 Jan 1

Fingerprint

Silicon nitride
Passivation
Plasma enhanced chemical vapor deposition
Optical properties
Gases
Silanes
Carrier lifetime
silicon nitride
Spectrophotometers
Ellipsometry
Rutherford backscattering spectroscopy
Ammonia
Fourier transform infrared spectroscopy
Hydrogen
Refractive index
Solar cells

Keywords

  • Passivation
  • Pecvd
  • Reflectance
  • Silicon nitride
  • Sin:h

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Comparison of passivation property on hydrogenated silicon nitrides whose antireflection properties are identical. / Kim, Jae Eun; Lee, Kyung Dong; Kang, Yoon Mook; Lee, Haeseok; Kim, Donghwan.

In: Korean Journal of Materials Research, Vol. 26, No. 1, 01.01.2016, p. 47-53.

Research output: Contribution to journalArticle

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