Abstract
The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.
| Original language | English |
|---|---|
| Pages (from-to) | 1487-1490 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 47 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2003 Sep 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Comparison of Pt/GaN and Pt/4H-SiC gas sensors. / Kim, Ji Hyun; Gila, B. P.; Abernathy, C. R.; Chung, G. Y.; Ren, F.; Pearton, S. J.
In: Solid-State Electronics, Vol. 47, No. 9, 01.09.2003, p. 1487-1490.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Comparison of Pt/GaN and Pt/4H-SiC gas sensors
AU - Kim, Ji Hyun
AU - Gila, B. P.
AU - Abernathy, C. R.
AU - Chung, G. Y.
AU - Ren, F.
AU - Pearton, S. J.
PY - 2003/9/1
Y1 - 2003/9/1
N2 - The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.
AB - The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.
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U2 - 10.1016/S0038-1101(02)00495-1
DO - 10.1016/S0038-1101(02)00495-1
M3 - Article
AN - SCOPUS:0038378809
VL - 47
SP - 1487
EP - 1490
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 9
ER -