Comparison of Pt/GaN and Pt/4H-SiC gas sensors

Ji Hyun Kim, B. P. Gila, C. R. Abernathy, G. Y. Chung, F. Ren, S. J. Pearton

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.

Original languageEnglish
Pages (from-to)1487-1490
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number9
DOIs
Publication statusPublished - 2003 Sep 1
Externally publishedYes

Fingerprint

Chemical sensors
Diodes
Gases
sensors
gases
Leak detection
combustion control
diodes
Temperature measurement
rectifiers
shift
Schottky diodes
temperature measurement
Molecules
Air
air
molecules
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, J. H., Gila, B. P., Abernathy, C. R., Chung, G. Y., Ren, F., & Pearton, S. J. (2003). Comparison of Pt/GaN and Pt/4H-SiC gas sensors. Solid-State Electronics, 47(9), 1487-1490. https://doi.org/10.1016/S0038-1101(02)00495-1

Comparison of Pt/GaN and Pt/4H-SiC gas sensors. / Kim, Ji Hyun; Gila, B. P.; Abernathy, C. R.; Chung, G. Y.; Ren, F.; Pearton, S. J.

In: Solid-State Electronics, Vol. 47, No. 9, 01.09.2003, p. 1487-1490.

Research output: Contribution to journalArticle

Kim, JH, Gila, BP, Abernathy, CR, Chung, GY, Ren, F & Pearton, SJ 2003, 'Comparison of Pt/GaN and Pt/4H-SiC gas sensors', Solid-State Electronics, vol. 47, no. 9, pp. 1487-1490. https://doi.org/10.1016/S0038-1101(02)00495-1
Kim JH, Gila BP, Abernathy CR, Chung GY, Ren F, Pearton SJ. Comparison of Pt/GaN and Pt/4H-SiC gas sensors. Solid-State Electronics. 2003 Sep 1;47(9):1487-1490. https://doi.org/10.1016/S0038-1101(02)00495-1
Kim, Ji Hyun ; Gila, B. P. ; Abernathy, C. R. ; Chung, G. Y. ; Ren, F. ; Pearton, S. J. / Comparison of Pt/GaN and Pt/4H-SiC gas sensors. In: Solid-State Electronics. 2003 ; Vol. 47, No. 9. pp. 1487-1490.
@article{d0177bd33be74d33b73be3fa8fcbc732,
title = "Comparison of Pt/GaN and Pt/4H-SiC gas sensors",
abstract = "The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10{\%} H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10{\%} H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.",
author = "Kim, {Ji Hyun} and Gila, {B. P.} and Abernathy, {C. R.} and Chung, {G. Y.} and F. Ren and Pearton, {S. J.}",
year = "2003",
month = "9",
day = "1",
doi = "10.1016/S0038-1101(02)00495-1",
language = "English",
volume = "47",
pages = "1487--1490",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Comparison of Pt/GaN and Pt/4H-SiC gas sensors

AU - Kim, Ji Hyun

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Chung, G. Y.

AU - Ren, F.

AU - Pearton, S. J.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.

AB - The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.

UR - http://www.scopus.com/inward/record.url?scp=0038378809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038378809&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00495-1

DO - 10.1016/S0038-1101(02)00495-1

M3 - Article

AN - SCOPUS:0038378809

VL - 47

SP - 1487

EP - 1490

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -