Comparison of Pt/GaN and Pt/4H-SiC gas sensors

Jihyun Kim; B. P. Gila; C. R. Abernathy; G. Y. Chung; F. Ren; S. J. Pearton

doi:10.1016/S0038-1101(02)00495-1

Comparison of Pt/GaN and Pt/4H-SiC gas sensors

Jihyun Kim, B. P. Gila, C. R. Abernathy, G. Y. Chung, F. Ren, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N₂, air, H₂, CF₄) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N₂ to 10% H₂ in N₂. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N₂ to 10% H₂ in N₂. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.

Original language	English
Pages (from-to)	1487-1490
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(02)00495-1
Publication status	Published - 2003 Sep
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Comparison of Pt/GaN and Pt/4H-SiC gas sensors",

abstract = "The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.",

author = "Jihyun Kim and Gila, {B. P.} and Abernathy, {C. R.} and Chung, {G. Y.} and F. Ren and Pearton, {S. J.}",

note = "Funding Information: The work at UF was partially supported by NSF (CTS 991173) and NASA (NAG10-316) monitored by Dr. William Knott. ",

year = "2003",

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doi = "10.1016/S0038-1101(02)00495-1",

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AU - Kim, Jihyun

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Chung, G. Y.

AU - Ren, F.

AU - Pearton, S. J.

N1 - Funding Information: The work at UF was partially supported by NSF (CTS 991173) and NASA (NAG10-316) monitored by Dr. William Knott.

PY - 2003/9

Y1 - 2003/9

N2 - The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.

AB - The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.

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JO - Solid-State Electronics

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Comparison of Pt/GaN and Pt/4H-SiC gas sensors

Abstract

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