Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Jihyun Kim, F. Ren, G. Y. Chung, M. F. MacMillan, A. G. Baca, R. D. Briggs, D. Schoenfeld, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


A comparison of the performance of WSi x rectifiers with Ni/SiC Schottky rectifiers to high dose γ-ray irradiation was discussed. SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi x or Ni rectifying contacts were irradiated with Co-60 γ-rays. It was found that high dose γ-ray irradiation of N/SiC schottky rectifiers show significant degradation of the forward current characteristics, due to instability of the contacts. The results show that the WSi x/SiC rectifiers show little deterioration of the contact with the same conditions.

Original languageEnglish
Pages (from-to)371-373
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2004 Jan 19
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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