Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Ji Hyun Kim, F. Ren, G. Y. Chung, M. F. MacMillan, A. G. Baca, R. D. Briggs, D. Schoenfeld, S. J. Pearton

Research output: Contribution to journalArticle

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Abstract

A comparison of the performance of WSi x rectifiers with Ni/SiC Schottky rectifiers to high dose γ-ray irradiation was discussed. SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi x or Ni rectifying contacts were irradiated with Co-60 γ-rays. It was found that high dose γ-ray irradiation of N/SiC schottky rectifiers show significant degradation of the forward current characteristics, due to instability of the contacts. The results show that the WSi x/SiC rectifiers show little deterioration of the contact with the same conditions.

Original languageEnglish
Pages (from-to)371-373
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number3
DOIs
Publication statusPublished - 2004 Jan 19
Externally publishedYes

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rectifiers
gamma rays
dosage
irradiation
rays
deterioration
electrical faults
degradation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, J. H., Ren, F., Chung, G. Y., MacMillan, M. F., Baca, A. G., Briggs, R. D., ... Pearton, S. J. (2004). Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation. Applied Physics Letters, 84(3), 371-373. https://doi.org/10.1063/1.1642271

Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation. / Kim, Ji Hyun; Ren, F.; Chung, G. Y.; MacMillan, M. F.; Baca, A. G.; Briggs, R. D.; Schoenfeld, D.; Pearton, S. J.

In: Applied Physics Letters, Vol. 84, No. 3, 19.01.2004, p. 371-373.

Research output: Contribution to journalArticle

Kim, JH, Ren, F, Chung, GY, MacMillan, MF, Baca, AG, Briggs, RD, Schoenfeld, D & Pearton, SJ 2004, 'Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation', Applied Physics Letters, vol. 84, no. 3, pp. 371-373. https://doi.org/10.1063/1.1642271
Kim, Ji Hyun ; Ren, F. ; Chung, G. Y. ; MacMillan, M. F. ; Baca, A. G. ; Briggs, R. D. ; Schoenfeld, D. ; Pearton, S. J. / Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation. In: Applied Physics Letters. 2004 ; Vol. 84, No. 3. pp. 371-373.
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