Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry