Abstract
Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 149 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2002 Nov 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. / Luo, B.; Mehandru, R.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Irokawa, Y.
In: Journal of the Electrochemical Society, Vol. 149, No. 11, 01.11.2002.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors
AU - Luo, B.
AU - Mehandru, R.
AU - Kim, Ji Hyun
AU - Ren, F.
AU - Gila, B. P.
AU - Onstine, A. H.
AU - Abernathy, C. R.
AU - Pearton, S. J.
AU - Fitch, R.
AU - Gillespie, J.
AU - Jenkins, T.
AU - Sewell, J.
AU - Via, D.
AU - Crespo, A.
AU - Irokawa, Y.
PY - 2002/11/1
Y1 - 2002/11/1
N2 - Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.
AB - Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.
UR - http://www.scopus.com/inward/record.url?scp=0036864577&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036864577&partnerID=8YFLogxK
U2 - 10.1149/1.1512675
DO - 10.1149/1.1512675
M3 - Article
AN - SCOPUS:0036864577
VL - 149
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 11
ER -