Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, Ji Hyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume149
Issue number11
DOIs
Publication statusPublished - 2002 Nov 1
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
Passivation
passivity
recovery
caps
Recovery
Plasmas
plasma chemistry
Induced currents
Surface states
Aging of materials
Vapors
vapors
aluminum gallium nitride
scandium oxide

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. / Luo, B.; Mehandru, R.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Irokawa, Y.

In: Journal of the Electrochemical Society, Vol. 149, No. 11, 01.11.2002.

Research output: Contribution to journalArticle

Luo, B, Mehandru, R, Kim, JH, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D, Crespo, A & Irokawa, Y 2002, 'Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors', Journal of the Electrochemical Society, vol. 149, no. 11. https://doi.org/10.1149/1.1512675
Luo, B. ; Mehandru, R. ; Kim, Ji Hyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y. / Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. In: Journal of the Electrochemical Society. 2002 ; Vol. 149, No. 11.
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