Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

B. Luo; R. Mehandru; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; R. Fitch; J. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo; Y. Irokawa

doi:10.1149/1.1512675

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Three different passivation layers (SiN_X, MgO, and Sc₂O₃) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiN_X produced ∼70-75% recovery of the drain-source current, independent of whether SIH₄/NH₃ or SiD₄/ND₃ plasma chemistries were employed. Both the Sc₂O₃ and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc₂O₃ had superior long-term stability, with no change in HEMT behavior over 5 months aging.

Original language	English
Pages (from-to)	G613-G619
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	11
DOIs	https://doi.org/10.1149/1.1512675
Publication status	Published - 2002 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1512675

Cite this

Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., & Irokawa, Y. (2002). Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. Journal of the Electrochemical Society, 149(11), G613-G619. https://doi.org/10.1149/1.1512675

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. / Luo, B.; Mehandru, R.; Kim, J.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Irokawa, Y.

In: Journal of the Electrochemical Society, Vol. 149, No. 11, 11.2002, p. G613-G619.

Research output: Contribution to journal › Article › peer-review

Luo, B, Mehandru, R, Kim, J, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D, Crespo, A & Irokawa, Y 2002, 'Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors', Journal of the Electrochemical Society, vol. 149, no. 11, pp. G613-G619. https://doi.org/10.1149/1.1512675

Luo, B. ; Mehandru, R. ; Kim, J. ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y. / Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. In: Journal of the Electrochemical Society. 2002 ; Vol. 149, No. 11. pp. G613-G619.

@article{6dc91bfc58494a86a4aad6c8eb1fcf3c,

title = "Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors",

abstract = "Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.",

author = "B. Luo and R. Mehandru and J. Kim and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and R. Fitch and J. Gillespie and T. Jenkins and J. Sewell and D. Via and A. Crespo and Y. Irokawa",

note = "Funding Information: This work was supported by grants from the Fondation pour la Recherche M{\'e}dicale (Programme “{\'e}quipe FRM,” DEQ20120323700) and the Agence Nationale de la Recherche (ANR) (ANR-08-MNP-030) to A.C. It was performed in the frame of the LABEX LIFESENSES (reference ANR-10-LABX-65) supported by French state funds managed by the ANR within the Investissements d{\textquoteright}Avenir program under reference ANR-11-IDEX-0004-02. P.Z. was the recipient of a postdoctoral fellowship from the R{\'e}gion ile de France (Neuropole). H.B. is the recipient of an {\'E}cole des Neurosciences de Paris (ENP) Graduate Program fellowship from the ENP and the R{\'e}gion Ile-de-France (DIM Cerveau et Pens{\'e}e). A.P. is a recipient of a fellowship under the Investissements d{\textquoteright}Avenir program (ANR-10-LABX-54 MEMO LIFE). Z.W. was supported in part by a Bristol-Myers Squibb Postdoctoral Fellowship at the Rockefeller University. ",

year = "2002",

month = nov,

doi = "10.1149/1.1512675",

language = "English",

volume = "149",

pages = "G613--G619",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

AU - Luo, B.

AU - Mehandru, R.

AU - Kim, J.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Fitch, R.

AU - Gillespie, J.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

AU - Irokawa, Y.

N1 - Funding Information: This work was supported by grants from the Fondation pour la Recherche Médicale (Programme “équipe FRM,” DEQ20120323700) and the Agence Nationale de la Recherche (ANR) (ANR-08-MNP-030) to A.C. It was performed in the frame of the LABEX LIFESENSES (reference ANR-10-LABX-65) supported by French state funds managed by the ANR within the Investissements d’Avenir program under reference ANR-11-IDEX-0004-02. P.Z. was the recipient of a postdoctoral fellowship from the Région ile de France (Neuropole). H.B. is the recipient of an École des Neurosciences de Paris (ENP) Graduate Program fellowship from the ENP and the Région Ile-de-France (DIM Cerveau et Pensée). A.P. is a recipient of a fellowship under the Investissements d’Avenir program (ANR-10-LABX-54 MEMO LIFE). Z.W. was supported in part by a Bristol-Myers Squibb Postdoctoral Fellowship at the Rockefeller University.

PY - 2002/11

Y1 - 2002/11

N2 - Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

AB - Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

UR - http://www.scopus.com/inward/record.url?scp=0036864577&partnerID=8YFLogxK

U2 - 10.1149/1.1512675

DO - 10.1149/1.1512675

M3 - Article

AN - SCOPUS:0036864577

VL - 149

SP - G613-G619

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this