@article{6dc91bfc58494a86a4aad6c8eb1fcf3c,
title = "Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors",
abstract = "Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.",
author = "B. Luo and R. Mehandru and J. Kim and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and R. Fitch and J. Gillespie and T. Jenkins and J. Sewell and D. Via and A. Crespo and Y. Irokawa",
note = "Funding Information: This work was supported by grants from the Fondation pour la Recherche M{\'e}dicale (Programme “{\'e}quipe FRM,” DEQ20120323700) and the Agence Nationale de la Recherche (ANR) (ANR-08-MNP-030) to A.C. It was performed in the frame of the LABEX LIFESENSES (reference ANR-10-LABX-65) supported by French state funds managed by the ANR within the Investissements d{\textquoteright}Avenir program under reference ANR-11-IDEX-0004-02. P.Z. was the recipient of a postdoctoral fellowship from the R{\'e}gion ile de France (Neuropole). H.B. is the recipient of an {\'E}cole des Neurosciences de Paris (ENP) Graduate Program fellowship from the ENP and the R{\'e}gion Ile-de-France (DIM Cerveau et Pens{\'e}e). A.P. is a recipient of a fellowship under the Investissements d{\textquoteright}Avenir program (ANR-10-LABX-54 MEMO LIFE). Z.W. was supported in part by a Bristol-Myers Squibb Postdoctoral Fellowship at the Rockefeller University. ",
year = "2002",
month = nov,
doi = "10.1149/1.1512675",
language = "English",
volume = "149",
pages = "G613--G619",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "11",
}