Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

B. Luo; R. Mehandru; Ji Hyun Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; R. Fitch; J. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo; Y. Irokawa

doi:10.1149/1.1512675

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, Ji Hyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

Research output: Contribution to journal › Article

39 Citations (Scopus)

Abstract

Three different passivation layers (SiN_X, MgO, and Sc₂O₃) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiN_X produced ∼70-75% recovery of the drain-source current, independent of whether SIH₄/NH₃ or SiD₄/ND₃ plasma chemistries were employed. Both the Sc₂O₃ and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc₂O₃ had superior long-term stability, with no change in HEMT behavior over 5 months aging.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	11
DOIs	https://doi.org/10.1149/1.1512675
Publication status	Published - 2002 Nov 1
Externally published	Yes

ASJC Scopus subject areas

Electrochemistry
Surfaces, Coatings and Films
Surfaces and Interfaces

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Luo, B., Mehandru, R., Kim, J. H., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., & Irokawa, Y. (2002). Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. Journal of the Electrochemical Society, 149(11). https://doi.org/10.1149/1.1512675

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. / Luo, B.; Mehandru, R.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Irokawa, Y.

In: Journal of the Electrochemical Society, Vol. 149, No. 11, 01.11.2002.

Research output: Contribution to journal › Article

Luo, B, Mehandru, R, Kim, JH, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D, Crespo, A & Irokawa, Y 2002, 'Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors', Journal of the Electrochemical Society, vol. 149, no. 11. https://doi.org/10.1149/1.1512675

Luo, B. ; Mehandru, R. ; Kim, Ji Hyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y. / Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. In: Journal of the Electrochemical Society. 2002 ; Vol. 149, No. 11.

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abstract = "Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.",

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AU - Luo, B.

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AU - Kim, Ji Hyun

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Fitch, R.

AU - Gillespie, J.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

AU - Irokawa, Y.

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AB - Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

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