Abstract
Three different passivation layers (SiNx, MgO and Sc 2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN x produced ∼80-85% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND 3 plasma chemistries were employed. Both the Sc2O 3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.
| Original language | English |
|---|---|
| Title of host publication | Proceedings IEEE Lester Eastman Conference on High Performance Devices |
| Pages | 477-486 |
| Number of pages | 10 |
| Publication status | Published - 2002 Dec 1 |
| Externally published | Yes |
| Event | Proceedings IEEE Lester Eastman Conference on High Performance Devices - Newark, DE, United States Duration: 2002 Aug 6 → 2002 Aug 8 |
Other
| Other | Proceedings IEEE Lester Eastman Conference on High Performance Devices |
|---|---|
| Country | United States |
| City | Newark, DE |
| Period | 02/8/6 → 02/8/8 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. / Luo, B.; Mehandru, R.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Irokawa, Y.
Proceedings IEEE Lester Eastman Conference on High Performance Devices. 2002. p. 477-486.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
AU - Luo, B.
AU - Mehandru, R.
AU - Kim, Ji Hyun
AU - Ren, F.
AU - Gila, B. P.
AU - Onstine, A. H.
AU - Abernathy, C. R.
AU - Pearton, S. J.
AU - Fitch, R.
AU - Gillespie, J.
AU - Jenkins, T.
AU - Sewell, J.
AU - Via, D.
AU - Crespo, A.
AU - Irokawa, Y.
PY - 2002/12/1
Y1 - 2002/12/1
N2 - Three different passivation layers (SiNx, MgO and Sc 2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN x produced ∼80-85% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND 3 plasma chemistries were employed. Both the Sc2O 3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.
AB - Three different passivation layers (SiNx, MgO and Sc 2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN x produced ∼80-85% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND 3 plasma chemistries were employed. Both the Sc2O 3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.
UR - http://www.scopus.com/inward/record.url?scp=0242270721&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0242270721&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0242270721
SN - 0780374789
SP - 477
EP - 486
BT - Proceedings IEEE Lester Eastman Conference on High Performance Devices
ER -