Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

B. Luo, R. Mehandru, Ji Hyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three different passivation layers (SiNx, MgO and Sc 2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN x produced ∼80-85% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND 3 plasma chemistries were employed. Both the Sc2O 3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

Original languageEnglish
Title of host publicationProceedings IEEE Lester Eastman Conference on High Performance Devices
Pages477-486
Number of pages10
Publication statusPublished - 2002 Dec 1
Externally publishedYes
EventProceedings IEEE Lester Eastman Conference on High Performance Devices - Newark, DE, United States
Duration: 2002 Aug 62002 Aug 8

Other

OtherProceedings IEEE Lester Eastman Conference on High Performance Devices
CountryUnited States
CityNewark, DE
Period02/8/602/8/8

ASJC Scopus subject areas

  • Engineering(all)

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    Luo, B., Mehandru, R., Kim, J. H., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., & Irokawa, Y. (2002). Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. In Proceedings IEEE Lester Eastman Conference on High Performance Devices (pp. 477-486)