Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

B. Luo; R. Mehandru; Ji Hyun Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; R. Fitch; J. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo; Y. Irokawa

Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

B. Luo, R. Mehandru, Ji Hyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Three different passivation layers (SiN_x, MgO and Sc ₂O₃) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN _x produced ∼80-85% recovery of the drain-source current, independent of whether SIH₄/NH₃ or SiD₄/ND ₃ plasma chemistries were employed. Both the Sc₂O ₃ and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc₂O₃ had superior long-term stability, with no change in HEMT behavior over 5 months aging.

Original language	English
Title of host publication	Proceedings IEEE Lester Eastman Conference on High Performance Devices
Pages	477-486
Number of pages	10
Publication status	Published - 2002 Dec 1
Externally published	Yes
Event	Proceedings IEEE Lester Eastman Conference on High Performance Devices - Newark, DE, United States Duration: 2002 Aug 6 → 2002 Aug 8

Other

Other	Proceedings IEEE Lester Eastman Conference on High Performance Devices
Country	United States
City	Newark, DE
Period	02/8/6 → 02/8/8

ASJC Scopus subject areas

Engineering(all)

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Luo, B., Mehandru, R., Kim, J. H., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., & Irokawa, Y. (2002). Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. In Proceedings IEEE Lester Eastman Conference on High Performance Devices (pp. 477-486)

Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. / Luo, B.; Mehandru, R.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R.; Gillespie, J.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Irokawa, Y.

Proceedings IEEE Lester Eastman Conference on High Performance Devices. 2002. p. 477-486.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Luo, B, Mehandru, R, Kim, JH, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D, Crespo, A & Irokawa, Y 2002, Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. in Proceedings IEEE Lester Eastman Conference on High Performance Devices. pp. 477-486, Proceedings IEEE Lester Eastman Conference on High Performance Devices, Newark, DE, United States, 02/8/6.

Luo, B. ; Mehandru, R. ; Kim, Ji Hyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y. / Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. Proceedings IEEE Lester Eastman Conference on High Performance Devices. 2002. pp. 477-486

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title = "Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors",

abstract = "Three different passivation layers (SiNx, MgO and Sc 2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN x produced ∼80-85% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND 3 plasma chemistries were employed. Both the Sc2O 3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.",

author = "B. Luo and R. Mehandru and Kim, {Ji Hyun} and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and R. Fitch and J. Gillespie and T. Jenkins and J. Sewell and D. Via and A. Crespo and Y. Irokawa",

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AU - Luo, B.

AU - Mehandru, R.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Fitch, R.

AU - Gillespie, J.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

AU - Irokawa, Y.

PY - 2002/12/1

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N2 - Three different passivation layers (SiNx, MgO and Sc 2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN x produced ∼80-85% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND 3 plasma chemistries were employed. Both the Sc2O 3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

AB - Three different passivation layers (SiNx, MgO and Sc 2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN x produced ∼80-85% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND 3 plasma chemistries were employed. Both the Sc2O 3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

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BT - Proceedings IEEE Lester Eastman Conference on High Performance Devices

T2 - Proceedings IEEE Lester Eastman Conference on High Performance Devices

Y2 - 6 August 2002 through 8 August 2002

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