@inproceedings{384a99c9404640e88f08b4a822b8f730,
title = "Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors",
abstract = "Three different passivation layers (SiNx, MgO and Sc 2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN x produced ∼80-85% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND 3 plasma chemistries were employed. Both the Sc2O 3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.",
author = "B. Luo and R. Mehandru and J. Kim and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and R. Fitch and J. Gillespie and T. Jenkins and J. Sewell and D. Via and A. Crespo and Y. Irokawa",
year = "2002",
language = "English",
isbn = "0780374789",
series = "Proceedings IEEE Lester Eastman Conference on High Performance Devices",
pages = "477--486",
booktitle = "Proceedings IEEE Lester Eastman Conference on High Performance Devices",
note = "Proceedings IEEE Lester Eastman Conference on High Performance Devices ; Conference date: 06-08-2002 Through 08-08-2002",
}