Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton, C. M. Lee, J. I. Chyi, R. G. Wilson, J. M. Zavada

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Fingerprint Dive into the research topics of 'Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy