Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures

Aurangzeb Khan, S. Marupaduga, M. Alam, N. J. Ekins-Daukes, Haeseok Lee, T. Sasaki, M. Yamaguchi

Research output: Contribution to journalConference article

Abstract

An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.

Original languageEnglish
Pages (from-to)663-666
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2005 Nov 30
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 2005 Jan 32005 Jan 7

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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