Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures

Aurangzeb Khan, S. Marupaduga, M. Alam, N. J. Ekins-Daukes, Haeseok Lee, T. Sasaki, M. Yamaguchi

Research output: Contribution to journalConference article

Abstract

An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.

Original languageEnglish
Pages (from-to)663-666
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2005 Nov 30
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 2005 Jan 32005 Jan 7

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Deep level transient spectroscopy
Solar cells
Annealing
Hole traps
Radiation
Defects
Electrons
Quantum efficiency
Short circuit currents
Diodes
Capacitance
Irradiation
Recovery
Electric potential
Hot Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures. / Khan, Aurangzeb; Marupaduga, S.; Alam, M.; Ekins-Daukes, N. J.; Lee, Haeseok; Sasaki, T.; Yamaguchi, M.

In: Conference Record of the IEEE Photovoltaic Specialists Conference, 30.11.2005, p. 663-666.

Research output: Contribution to journalConference article

@article{95bc12524b374bbb8746d9279d7de28a,
title = "Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures",
abstract = "An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.",
author = "Aurangzeb Khan and S. Marupaduga and M. Alam and Ekins-Daukes, {N. J.} and Haeseok Lee and T. Sasaki and M. Yamaguchi",
year = "2005",
month = "11",
day = "30",
language = "English",
pages = "663--666",
journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",
issn = "0160-8371",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures

AU - Khan, Aurangzeb

AU - Marupaduga, S.

AU - Alam, M.

AU - Ekins-Daukes, N. J.

AU - Lee, Haeseok

AU - Sasaki, T.

AU - Yamaguchi, M.

PY - 2005/11/30

Y1 - 2005/11/30

N2 - An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.

AB - An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.

UR - http://www.scopus.com/inward/record.url?scp=27944473342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27944473342&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:27944473342

SP - 663

EP - 666

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

SN - 0160-8371

ER -