Comparison of two layout options for 110-GHz CMOS LC cross-coupled oscillators

Doyoon Kim, Jae-Sung Rieh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showed an output power of -3.9 dBm at 111 GHz with a phase noise of -75 dBc/Hz at 1-MHz offset. On the other hand, OSC2, with a modified cross-coupled line layout, generated an output power of -2.0 dBm at 117 GHz with a phase noise of -77 dBc/Hz at 1-MHz offset. The result indicates that the optimized layout can improve key oscillator performances such as oscillation frequency and output power.

Original languageEnglish
Pages (from-to)141-143
Number of pages3
JournalJournal of Electromagnetic Engineering and Science
Volume18
Issue number2
DOIs
Publication statusPublished - 2018 Apr 1

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Phase noise
layouts
CMOS
oscillators
Networks (circuits)
output
Topology
topology
oscillations

Keywords

  • 65-nm CMOS
  • Layout
  • LC cross-coupled
  • Oscillators
  • Signal generation

ASJC Scopus subject areas

  • Radiation
  • Instrumentation
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Comparison of two layout options for 110-GHz CMOS LC cross-coupled oscillators. / Kim, Doyoon; Rieh, Jae-Sung.

In: Journal of Electromagnetic Engineering and Science, Vol. 18, No. 2, 01.04.2018, p. 141-143.

Research output: Contribution to journalArticle

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