Complementary spin transistor using a quantum well channel

Youn Ho Park, Jun Woo Choi, Hyung Jun Kim, Joonyeon Chang, Suk Hee Han, Heon Jin Choi, Hyun Cheol Koo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

Original languageEnglish
Article number46671
JournalScientific Reports
Volume7
DOIs
Publication statusPublished - 2017 Jan 1

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transistors
quantum wells
logic
electrodes
field effect transistors
magnetization
electric potential

ASJC Scopus subject areas

  • General

Cite this

Park, Y. H., Choi, J. W., Kim, H. J., Chang, J., Han, S. H., Choi, H. J., & Koo, H. C. (2017). Complementary spin transistor using a quantum well channel. Scientific Reports, 7, [46671]. https://doi.org/10.1038/srep46671

Complementary spin transistor using a quantum well channel. / Park, Youn Ho; Choi, Jun Woo; Kim, Hyung Jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon Jin; Koo, Hyun Cheol.

In: Scientific Reports, Vol. 7, 46671, 01.01.2017.

Research output: Contribution to journalArticle

Park, YH, Choi, JW, Kim, HJ, Chang, J, Han, SH, Choi, HJ & Koo, HC 2017, 'Complementary spin transistor using a quantum well channel', Scientific Reports, vol. 7, 46671. https://doi.org/10.1038/srep46671
Park YH, Choi JW, Kim HJ, Chang J, Han SH, Choi HJ et al. Complementary spin transistor using a quantum well channel. Scientific Reports. 2017 Jan 1;7. 46671. https://doi.org/10.1038/srep46671
Park, Youn Ho ; Choi, Jun Woo ; Kim, Hyung Jun ; Chang, Joonyeon ; Han, Suk Hee ; Choi, Heon Jin ; Koo, Hyun Cheol. / Complementary spin transistor using a quantum well channel. In: Scientific Reports. 2017 ; Vol. 7.
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