Complementary spin transistor using a quantum well channel

Youn Ho Park, Jun Woo Choi, Hyung Jun Kim, Joonyeon Chang, Suk Hee Han, Heon Jin Choi, Hyun Cheol Koo

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Abstract

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

Original languageEnglish
Article number46671
JournalScientific Reports
Volume7
DOIs
Publication statusPublished - 2017 Jan 1

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Cite this

Park, Y. H., Choi, J. W., Kim, H. J., Chang, J., Han, S. H., Choi, H. J., & Koo, H. C. (2017). Complementary spin transistor using a quantum well channel. Scientific Reports, 7, [46671]. https://doi.org/10.1038/srep46671