We have investigated the structural and electrical properties of Zrx Tiy O2 films grown on a Ru O2 substrate by atomic layer deposition (ALD) with a variation of the ALD cycle ratio of Zr O2 [Zr O2 +Ti O2], RZr [Zr+Ti]. Ti O2 films (15 nm thick) grown at 225°C using water as an oxygen source showed a rutile structure and a dielectric constant of 90 after postannealing at 600°C. With an increase of RZr [Zr+Ti] to 0.50, the leakage current density of 15 nm thick Zrx Tiy O2 films grown at 225°C was improved to be 1.2× 10-6 A cm2, but the dielectric constant decreased to 20. This is attributed to the destruction of rutile Ti O2 structures into amorphous Zrx Tiy O2 phase by the increase of Zr content.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry