Compositional dependence of the properties of ferroelectric Pb(Zr xTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers

Kwang Bae Lee, Kyung Haeng Lee, Byeong Kwon Ju

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1 Citation (Scopus)


Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTi1-x)O3 (PZT) (x=0.2-0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by means of the reactive sputtering method. PtRhO y/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr0.4Ti0.6)O3 thin film capacitor showed the superior ferroelectric properties, such as the P-E hysteresis characteristics and the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22μC/cm 2 and 87kV/cm, respectively, and the polarization loss was only less than 5% after 1011 switching repetitions. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layered PtRhOy films behaved as high quality electrode barriers for PZT thin film capacitors.

Original languageEnglish
Pages (from-to)1543-1546
Number of pages4
JournalCeramics International
Issue number7
Publication statusPublished - 2004
Externally publishedYes
Event3rd Asian Meeting on Electroceramics - Singapore, Singapore
Duration: 2003 Dec 72003 Dec 11


  • Electrode barrier
  • Ferroelectric thin film
  • Pb(ZrTi) O
  • PtRhO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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