Compositional dependence of the properties of ferroelectric Pb(Zr xTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers

Kwang Bae Lee; Kyung Haeng Lee; Byeong Kwon Ju

doi:10.1016/j.ceramint.2003.12.094

Compositional dependence of the properties of ferroelectric Pb(Zr _xTi_1-x)O₃ thin film capacitors deposited on single-layered PtRhO_y electrode barriers

Kwang Bae Lee, Kyung Haeng Lee, Byeong Kwon Ju

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Single-layered PtRhO_y thin films were investigated as electrode barriers for ferroelectric Pb(Zr_xTi_1-x)O₃ (PZT) (x=0.2-0.8) thin film capacitors. PtRhO_y thin films were deposited directly on n+ Si wafers by means of the reactive sputtering method. PtRhO _y/PZT/PtRhO_y/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr_0.4Ti_0.6)O₃ thin film capacitor showed the superior ferroelectric properties, such as the P-E hysteresis characteristics and the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22μC/cm ² and 87kV/cm, respectively, and the polarization loss was only less than 5% after 10¹¹ switching repetitions. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layered PtRhO_y films behaved as high quality electrode barriers for PZT thin film capacitors.

Original language	English
Pages (from-to)	1543-1546
Number of pages	4
Journal	Ceramics International
Volume	30
Issue number	7
DOIs	https://doi.org/10.1016/j.ceramint.2003.12.094
Publication status	Published - 2004
Externally published	Yes
Event	3rd Asian Meeting on Electroceramics - Singapore, Singapore Duration: 2003 Dec 7 → 2003 Dec 11

Keywords

Electrode barrier
Ferroelectric thin film
Pb(ZrTi) O
PtRhO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2003.12.094

Cite this

@article{4db1f1c9ef0a469ba569bac6741f37b9,

title = "Compositional dependence of the properties of ferroelectric Pb(Zr xTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers",

abstract = "Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTi1-x)O3 (PZT) (x=0.2-0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by means of the reactive sputtering method. PtRhO y/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr0.4Ti0.6)O3 thin film capacitor showed the superior ferroelectric properties, such as the P-E hysteresis characteristics and the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22μC/cm 2 and 87kV/cm, respectively, and the polarization loss was only less than 5% after 1011 switching repetitions. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layered PtRhOy films behaved as high quality electrode barriers for PZT thin film capacitors.",

keywords = "Electrode barrier, Ferroelectric thin film, Pb(ZrTi) O, PtRhO",

author = "Lee, {Kwang Bae} and Lee, {Kyung Haeng} and Ju, {Byeong Kwon}",

year = "2004",

doi = "10.1016/j.ceramint.2003.12.094",

language = "English",

volume = "30",

pages = "1543--1546",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Limited",

number = "7",

note = "3rd Asian Meeting on Electroceramics ; Conference date: 07-12-2003 Through 11-12-2003",

}

TY - JOUR

T1 - Compositional dependence of the properties of ferroelectric Pb(Zr xTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers

AU - Lee, Kwang Bae

AU - Lee, Kyung Haeng

AU - Ju, Byeong Kwon

PY - 2004

Y1 - 2004

N2 - Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTi1-x)O3 (PZT) (x=0.2-0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by means of the reactive sputtering method. PtRhO y/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr0.4Ti0.6)O3 thin film capacitor showed the superior ferroelectric properties, such as the P-E hysteresis characteristics and the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22μC/cm 2 and 87kV/cm, respectively, and the polarization loss was only less than 5% after 1011 switching repetitions. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layered PtRhOy films behaved as high quality electrode barriers for PZT thin film capacitors.

AB - Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTi1-x)O3 (PZT) (x=0.2-0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by means of the reactive sputtering method. PtRhO y/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr0.4Ti0.6)O3 thin film capacitor showed the superior ferroelectric properties, such as the P-E hysteresis characteristics and the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22μC/cm 2 and 87kV/cm, respectively, and the polarization loss was only less than 5% after 1011 switching repetitions. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layered PtRhOy films behaved as high quality electrode barriers for PZT thin film capacitors.

KW - Electrode barrier

KW - Ferroelectric thin film

KW - Pb(ZrTi) O

KW - PtRhO

UR - http://www.scopus.com/inward/record.url?scp=4344687473&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2003.12.094

DO - 10.1016/j.ceramint.2003.12.094

M3 - Conference article

AN - SCOPUS:4344687473

SN - 0272-8842

VL - 30

SP - 1543

EP - 1546

JO - Ceramics International

JF - Ceramics International

IS - 7

T2 - 3rd Asian Meeting on Electroceramics

Y2 - 7 December 2003 through 11 December 2003

ER -