Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet

Young Rang Uhm, Sang Ho Lim

Research output: Contribution to journalConference article


The magnetoresistance behavior in magnetic tunnel junctions (MTJ) exchange biased by synthetic antiferromagnets was discussed. A multidomain-multilayer model was used. Results showed that as the cell size decreases the resistance to magnetization-flop increases due to increased shape anisotropy.

Original languageEnglish
Pages (from-to)ER03
JournalDigests of the Intermag Conference
Publication statusPublished - 2002 Dec 1
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this