Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet

Young Rang Uhm, Sang Ho Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The magnetoresistance behavior in magnetic tunnel junctions (MTJ) exchange biased by synthetic antiferromagnets was discussed. A multidomain-multilayer model was used. Results showed that as the cell size decreases the resistance to magnetization-flop increases due to increased shape anisotropy.

Original languageEnglish
Title of host publicationDigests of the Intermag Conference
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

Other

Other2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG
CountryNetherlands
CityAmsterdam
Period02/4/2802/5/2

Fingerprint

Tunnel junctions
Magnetoresistance
Magnetization
Multilayers
Anisotropy
Computer simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet. / Uhm, Young Rang; Lim, Sang Ho.

Digests of the Intermag Conference. 2002.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uhm, YR & Lim, SH 2002, Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet. in Digests of the Intermag Conference. 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG, Amsterdam, Netherlands, 02/4/28.
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