Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet

Y. R. Uhm, Sang Ho Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.

Original languageEnglish
Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780373650, 9780780373655
DOIs
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

Other

Other2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
CountryNetherlands
CityAmsterdam
Period02/4/2802/5/2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films

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    Uhm, Y. R., & Lim, S. H. (2002). Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet. In INTERMAG Europe 2002 - IEEE International Magnetics Conference [1001178] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2002.1001178