Abstract
In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.
| Original language | English |
|---|---|
| Title of host publication | INTERMAG Europe 2002 - IEEE International Magnetics Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 0780373650, 9780780373655 |
| DOIs | |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2 |
Other
| Other | 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 |
|---|---|
| Country | Netherlands |
| City | Amsterdam |
| Period | 02/4/28 → 02/5/2 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Surfaces, Coatings and Films
Cite this
Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet. / Uhm, Y. R.; Lim, Sang Ho.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc., 2002. 1001178.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet
AU - Uhm, Y. R.
AU - Lim, Sang Ho
PY - 2002
Y1 - 2002
N2 - In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.
AB - In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.
UR - http://www.scopus.com/inward/record.url?scp=85017197870&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85017197870&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2002.1001178
DO - 10.1109/INTMAG.2002.1001178
M3 - Conference contribution
BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -