Abstract
In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.
Original language | English |
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Title of host publication | INTERMAG Europe 2002 - IEEE International Magnetics Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 0780373650, 9780780373655 |
DOIs | |
Publication status | Published - 2002 |
Externally published | Yes |
Event | 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2 |
Other
Other | 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 |
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Country/Territory | Netherlands |
City | Amsterdam |
Period | 02/4/28 → 02/5/2 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Surfaces, Coatings and Films