Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet

Y. R. Uhm; Sang Ho Lim

doi:10.1109/INTMAG.2002.1001178

Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.

Original language	English
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001178
Publication status	Published - 2002
Externally published	Yes
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country	Netherlands
City	Amsterdam
Period	02/4/28 → 02/5/2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

Access to Document

10.1109/INTMAG.2002.1001178

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Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet. / Uhm, Y. R.; Lim, Sang Ho.

INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc., 2002. 1001178.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uhm, YR & Lim, SH 2002, Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet. in INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001178, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 02/4/28. https://doi.org/10.1109/INTMAG.2002.1001178

@inproceedings{4ec58dce731a428d825fbb70faf7342b,

title = "Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet",

abstract = "In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.",

author = "Uhm, {Y. R.} and Lim, {Sang Ho}",

year = "2002",

doi = "10.1109/INTMAG.2002.1001178",

language = "English",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

}

TY - GEN

T1 - Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet

AU - Uhm, Y. R.

AU - Lim, Sang Ho

PY - 2002

Y1 - 2002

N2 - In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.

AB - In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.

UR - http://www.scopus.com/inward/record.url?scp=85017197870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85017197870&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2002.1001178

DO - 10.1109/INTMAG.2002.1001178

M3 - Conference contribution

AN - SCOPUS:85017197870

BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Y2 - 28 April 2002 through 2 May 2002

ER -