Conduction mechanisms in barium tantalates films and modification of interfacial barrier height

Yun-Hi Lee, Young Sik Kim, Dong Ho Kim, Byeong Kwon Ju, Myung Hwan Oh

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The leakage current-voltage characteristics of rf-magnetron sputtered BaTa2O6 film in a capacitor with the top aluminum and the bottom indium-tin-oxide electrodes have been investigated as a function of applied field and temperature. In order to study the effect of the surface treatment on the electrical characteristics of as-deposited film we performed an oxygen plasma treatment on BaTa2O6 surface. The dc current-voltage, bipolar pulse charge-voltage, dc current-time, and small ac signal capacitance-frequency characteristics were measured to study the electrical and the dielectric properties of BaTa2O6 thin film. All of the BaTa2O6 films in this study exhibited a low leakage current, a high breakdown field strength (3-4.5 MV/cm), and a high dielectric constant (20-30). From the temperature dependence of the leakage current, we could conclude that the dominant conduction mechanism under high electrical fields (>1 MV/cm) is ascribed to the Schottky emission while the ohmic conduction is dominant at low electrical fields (<1 MV/cm). Furthermore, the oxygen plasma treatment on the surface of as-deposited BaTa2O6 resulted in a lowering of the interface barrier height and thus, a reduction of the leakage current at Al under a negative bias. This can be explained by the formation of Ba-rich metallic layer by surface etching effect and by filling the oxygen vacancies in the bulk.

Original languageEnglish
Pages (from-to)71-76
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume47
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

Fingerprint

Barium
Leakage currents
barium
conduction
leakage
oxygen plasma
Oxygen
Plasmas
Electric potential
electric potential
Oxygen vacancies
Current voltage characteristics
Tin oxides
Aluminum
Dielectric properties
Indium
Surface treatment
Etching
Capacitors
Permittivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Conduction mechanisms in barium tantalates films and modification of interfacial barrier height. / Lee, Yun-Hi; Kim, Young Sik; Kim, Dong Ho; Ju, Byeong Kwon; Oh, Myung Hwan.

In: IEEE Transactions on Electron Devices, Vol. 47, No. 1, 01.01.2000, p. 71-76.

Research output: Contribution to journalArticle

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