Abstract
The leakage current-voltage characteristics of rf-magnetron sputtered BaTa2O6 film in a capacitor with the top aluminum and the bottom indium-tin-oxide electrodes have been investigated as a function of applied field and temperature. In order to study the effect of the surface treatment on the electrical characteristics of as-deposited film we performed an oxygen plasma treatment on BaTa2O6 surface. The dc current-voltage, bipolar pulse charge-voltage, dc current-time, and small ac signal capacitance-frequency characteristics were measured to study the electrical and the dielectric properties of BaTa2O6 thin film. All of the BaTa2O6 films in this study exhibited a low leakage current, a high breakdown field strength (3-4.5 MV/cm), and a high dielectric constant (20-30). From the temperature dependence of the leakage current, we could conclude that the dominant conduction mechanism under high electrical fields (>1 MV/cm) is ascribed to the Schottky emission while the ohmic conduction is dominant at low electrical fields (<1 MV/cm). Furthermore, the oxygen plasma treatment on the surface of as-deposited BaTa2O6 resulted in a lowering of the interface barrier height and thus, a reduction of the leakage current at Al under a negative bias. This can be explained by the formation of Ba-rich metallic layer by surface etching effect and by filling the oxygen vacancies in the bulk.
| Original language | English |
|---|---|
| Pages (from-to) | 71-76 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 47 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Conduction mechanisms in barium tantalates films and modification of interfacial barrier height. / Lee, Yun-Hi; Kim, Young Sik; Kim, Dong Ho; Ju, Byeong Kwon; Oh, Myung Hwan.
In: IEEE Transactions on Electron Devices, Vol. 47, No. 1, 01.01.2000, p. 71-76.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Conduction mechanisms in barium tantalates films and modification of interfacial barrier height
AU - Lee, Yun-Hi
AU - Kim, Young Sik
AU - Kim, Dong Ho
AU - Ju, Byeong Kwon
AU - Oh, Myung Hwan
PY - 2000/1/1
Y1 - 2000/1/1
N2 - The leakage current-voltage characteristics of rf-magnetron sputtered BaTa2O6 film in a capacitor with the top aluminum and the bottom indium-tin-oxide electrodes have been investigated as a function of applied field and temperature. In order to study the effect of the surface treatment on the electrical characteristics of as-deposited film we performed an oxygen plasma treatment on BaTa2O6 surface. The dc current-voltage, bipolar pulse charge-voltage, dc current-time, and small ac signal capacitance-frequency characteristics were measured to study the electrical and the dielectric properties of BaTa2O6 thin film. All of the BaTa2O6 films in this study exhibited a low leakage current, a high breakdown field strength (3-4.5 MV/cm), and a high dielectric constant (20-30). From the temperature dependence of the leakage current, we could conclude that the dominant conduction mechanism under high electrical fields (>1 MV/cm) is ascribed to the Schottky emission while the ohmic conduction is dominant at low electrical fields (<1 MV/cm). Furthermore, the oxygen plasma treatment on the surface of as-deposited BaTa2O6 resulted in a lowering of the interface barrier height and thus, a reduction of the leakage current at Al under a negative bias. This can be explained by the formation of Ba-rich metallic layer by surface etching effect and by filling the oxygen vacancies in the bulk.
AB - The leakage current-voltage characteristics of rf-magnetron sputtered BaTa2O6 film in a capacitor with the top aluminum and the bottom indium-tin-oxide electrodes have been investigated as a function of applied field and temperature. In order to study the effect of the surface treatment on the electrical characteristics of as-deposited film we performed an oxygen plasma treatment on BaTa2O6 surface. The dc current-voltage, bipolar pulse charge-voltage, dc current-time, and small ac signal capacitance-frequency characteristics were measured to study the electrical and the dielectric properties of BaTa2O6 thin film. All of the BaTa2O6 films in this study exhibited a low leakage current, a high breakdown field strength (3-4.5 MV/cm), and a high dielectric constant (20-30). From the temperature dependence of the leakage current, we could conclude that the dominant conduction mechanism under high electrical fields (>1 MV/cm) is ascribed to the Schottky emission while the ohmic conduction is dominant at low electrical fields (<1 MV/cm). Furthermore, the oxygen plasma treatment on the surface of as-deposited BaTa2O6 resulted in a lowering of the interface barrier height and thus, a reduction of the leakage current at Al under a negative bias. This can be explained by the formation of Ba-rich metallic layer by surface etching effect and by filling the oxygen vacancies in the bulk.
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U2 - 10.1109/16.817569
DO - 10.1109/16.817569
M3 - Article
VL - 47
SP - 71
EP - 76
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 1
ER -