### Abstract

Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-n** plus heterojunction of Au/nIn//0//. //1Ga//0//. //9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap E//C-0. 13 eV at a concentration of -8 multiplied by 10**1**0 cm**-**2 in a 300-angstrom box-like distribution is included in the calculation. For molecular beam epitaxially grown nIn//0//. //1Ga//0//. //9As/n** plus GaAs, deep-level transient spectroscopy suggests that the interface traps are at E//C-0. 13 and E//C-0. 17 eV with capture cross sections of about 2 multiplied by 10**-**1**4 and 1 multiplied by 10**-**1**5 cm**2.

Original language | English |
---|---|

Pages (from-to) | 1911-1918 |

Number of pages | 8 |

Journal | IEEE Transactions on Electron Devices |

Volume | ED-34 |

Issue number | 9 |

Publication status | Published - 1987 Sep 1 |

Externally published | Yes |

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### ASJC Scopus subject areas

- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)

### Cite this

*IEEE Transactions on Electron Devices*,

*ED-34*(9), 1911-1918.

**CONSIDERATION OF DISCRETE INTERFACE TRAPS IN InGaAs/GaAs HETEROJUNCTIONS.** / Jeong, Jichai; Schlesinger, Tuviah; Milnes, Arthur G.

Research output: Contribution to journal › Article

*IEEE Transactions on Electron Devices*, vol. ED-34, no. 9, pp. 1911-1918.

}

TY - JOUR

T1 - CONSIDERATION OF DISCRETE INTERFACE TRAPS IN InGaAs/GaAs HETEROJUNCTIONS.

AU - Jeong, Jichai

AU - Schlesinger, Tuviah

AU - Milnes, Arthur G.

PY - 1987/9/1

Y1 - 1987/9/1

N2 - Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-n** plus heterojunction of Au/nIn//0//. //1Ga//0//. //9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap E//C-0. 13 eV at a concentration of -8 multiplied by 10**1**0 cm**-**2 in a 300-angstrom box-like distribution is included in the calculation. For molecular beam epitaxially grown nIn//0//. //1Ga//0//. //9As/n** plus GaAs, deep-level transient spectroscopy suggests that the interface traps are at E//C-0. 13 and E//C-0. 17 eV with capture cross sections of about 2 multiplied by 10**-**1**4 and 1 multiplied by 10**-**1**5 cm**2.

AB - Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-n** plus heterojunction of Au/nIn//0//. //1Ga//0//. //9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap E//C-0. 13 eV at a concentration of -8 multiplied by 10**1**0 cm**-**2 in a 300-angstrom box-like distribution is included in the calculation. For molecular beam epitaxially grown nIn//0//. //1Ga//0//. //9As/n** plus GaAs, deep-level transient spectroscopy suggests that the interface traps are at E//C-0. 13 and E//C-0. 17 eV with capture cross sections of about 2 multiplied by 10**-**1**4 and 1 multiplied by 10**-**1**5 cm**2.

UR - http://www.scopus.com/inward/record.url?scp=0023421568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023421568&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0023421568

VL - ED-34

SP - 1911

EP - 1918

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 9

ER -