CONSIDERATION OF DISCRETE INTERFACE TRAPS IN InGaAs/GaAs HETEROJUNCTIONS.

Jichai Jeong, Tuviah Schlesinger, Arthur G. Milnes

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-n** plus heterojunction of Au/nIn//0//. //1Ga//0//. //9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap E//C-0. 13 eV at a concentration of -8 multiplied by 10**1**0 cm**-**2 in a 300-angstrom box-like distribution is included in the calculation. For molecular beam epitaxially grown nIn//0//. //1Ga//0//. //9As/n** plus GaAs, deep-level transient spectroscopy suggests that the interface traps are at E//C-0. 13 and E//C-0. 17 eV with capture cross sections of about 2 multiplied by 10**-**1**4 and 1 multiplied by 10**-**1**5 cm**2.

Original languageEnglish
Pages (from-to)1911-1918
Number of pages8
JournalIEEE Transactions on Electron Devices
VolumeED-34
Issue number9
Publication statusPublished - 1987 Sep 1
Externally publishedYes

Fingerprint

traps
Heterojunctions
Electrons
Capacitance
boxes
heterojunctions
Deep level transient spectroscopy
Two dimensional electron gas
Molecular beams
capacitance
Poisson equation
Electric potential
electrons
electric potential
profiles
absorption cross sections
molecular beams
electron gas
gallium arsenide
spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

CONSIDERATION OF DISCRETE INTERFACE TRAPS IN InGaAs/GaAs HETEROJUNCTIONS. / Jeong, Jichai; Schlesinger, Tuviah; Milnes, Arthur G.

In: IEEE Transactions on Electron Devices, Vol. ED-34, No. 9, 01.09.1987, p. 1911-1918.

Research output: Contribution to journalArticle

Jeong, Jichai ; Schlesinger, Tuviah ; Milnes, Arthur G. / CONSIDERATION OF DISCRETE INTERFACE TRAPS IN InGaAs/GaAs HETEROJUNCTIONS. In: IEEE Transactions on Electron Devices. 1987 ; Vol. ED-34, No. 9. pp. 1911-1918.
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