Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices

Chang S. Son, Tae Geun Kim, Xue L. Wang, Mutsuo Ogura

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have developed a new way of the constant growth technique to conserve a grating height of vertical-stacked V-groove AlGaAs/GaAs multilayer on submicron gratings up to 1.5 μm thickness by a low-pressure metalorganic chemical vapor deposition. The V-shaped GaAs buffer, grown on thermally deformed submicron gratings, has an important role in overcoming mass transport effects by recovering the deformed grating profile from sinusoidal to V-shaped. The low AlAs mole fraction is favorable to preserve the grating height up to a greater thickness. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

Original languageEnglish
Pages (from-to)201-207
Number of pages7
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
Publication statusPublished - 2000 Dec 1
Externally publishedYes

Fingerprint

V grooves
Optical devices
aluminum gallium arsenides
Multilayers
gratings
Low pressure chemical vapor deposition
Distributed feedback lasers
Metallorganic chemical vapor deposition
Photonic crystals
Optoelectronic devices
Buffers
Mass transfer
distributed feedback lasers
optoelectronic devices
metalorganic chemical vapor deposition
low pressure
buffers
gallium arsenide
photonics
profiles

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices. / Son, Chang S.; Kim, Tae Geun; Wang, Xue L.; Ogura, Mutsuo.

In: Journal of Crystal Growth, Vol. 221, No. 1-4, 01.12.2000, p. 201-207.

Research output: Contribution to journalArticle

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