Contact characteristics of silicon and Indium Tin Oxide (ITO) in polysilicon thin-film transistors

Won Kyu Park, Yoon Mook Kang, Donghwan Kim, Won Kyu Park

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Contact-resistance reduction methods were investigated for the contact between Si layer and indium tin oxide (ITO) when the number of photolithography-mask step processes needs to be reduced in the new polycrystalline silicon thin-film-transistor (TFT) device structure. A barrier oxide has been developed for ITO/Si contact in polysilicon TFT. Titanium oxide located between Si and ITO may prevent the formation of silicon oxide that degrades the contact resistance. This method is useful for displays because it meets the requirements for the electric and optical characteristics.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume48
Issue numberSUPPL. 1
Publication statusPublished - 2006 Jan 1

Fingerprint

indium oxides
tin oxides
transistors
contact resistance
silicon
thin films
photolithography
silicon oxides
titanium oxides
masks
requirements
oxides

Keywords

  • Contact resistance
  • Indium tin oxide
  • Polycrystalline silicon TFT

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Contact characteristics of silicon and Indium Tin Oxide (ITO) in polysilicon thin-film transistors. / Park, Won Kyu; Kang, Yoon Mook; Kim, Donghwan; Park, Won Kyu.

In: Journal of the Korean Physical Society, Vol. 48, No. SUPPL. 1, 01.01.2006.

Research output: Contribution to journalArticle

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AB - Contact-resistance reduction methods were investigated for the contact between Si layer and indium tin oxide (ITO) when the number of photolithography-mask step processes needs to be reduced in the new polycrystalline silicon thin-film-transistor (TFT) device structure. A barrier oxide has been developed for ITO/Si contact in polysilicon TFT. Titanium oxide located between Si and ITO may prevent the formation of silicon oxide that degrades the contact resistance. This method is useful for displays because it meets the requirements for the electric and optical characteristics.

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