Contact resistance reduction using dielectric materials of nanoscale thickness on silicon for monolithic 3D integration

Seung Hwan Kim, Gwang Sik Kim, Seyong Oh, Jin Hong Park, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this work, we demonstrated the characteristics of metal-interlayer-semiconductor (MIS) structures using various dielectric materials of nanoscale thickness, in particular HfO2, Al2O3, ZnO, and TiO2, for contact resistivity reduction of silicon (Si) source/drain (S/D) ohmic contacts. The ultrathin dielectric materials can induce Fermi-level unpinning between the metal and the Si by preventing the penetration of metal-induced gap states (MIGS) into the Si. n-Si (7 × 1018 cm-3) and n+-Si (1 × 1021 cm-3) were used to confirm the characteristics of the MIS structures and to achieve low specific contact resistivity (ρc), respectively. The Ti/Al2O3 (2 nm)/n+-Si contact showed a low ρc of 5.1 × 10-8 Ω · cm2 with high thermal stability, about 125 times lower ρc than that of a metal-semiconductor (MS) contact. These results suggest that the proposed non-alloyed MIS contact can be incorporated into monolithic three-dimensional (3D) complementary metal-oxide-semiconductor (CMOS) integration technologies.

Original languageEnglish
Pages (from-to)12764-12767
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number12
DOIs
Publication statusPublished - 2016 Dec 1

Keywords

  • Fermi-level pinning
  • Monolithic three-dimensional
  • Nanoscale
  • Silicon
  • Source/drain contact
  • Specific contact resistivity

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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