Contact resistance reduction using dielectric materials of nanoscale thickness on silicon for monolithic 3D integration

Seung Hwan Kim, Gwang Sik Kim, Seyong Oh, Jin Hong Park, Hyun-Yong Yu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this work, we demonstrated the characteristics of metal-interlayer-semiconductor (MIS) structures using various dielectric materials of nanoscale thickness, in particular HfO2, Al2O3, ZnO, and TiO2, for contact resistivity reduction of silicon (Si) source/drain (S/D) ohmic contacts. The ultrathin dielectric materials can induce Fermi-level unpinning between the metal and the Si by preventing the penetration of metal-induced gap states (MIGS) into the Si. n-Si (7 × 1018 cm-3) and n+-Si (1 × 1021 cm-3) were used to confirm the characteristics of the MIS structures and to achieve low specific contact resistivity (ρc), respectively. The Ti/Al2O3 (2 nm)/n+-Si contact showed a low ρc of 5.1 × 10-8 Ω · cm2 with high thermal stability, about 125 times lower ρc than that of a metal-semiconductor (MS) contact. These results suggest that the proposed non-alloyed MIS contact can be incorporated into monolithic three-dimensional (3D) complementary metal-oxide-semiconductor (CMOS) integration technologies.

Original languageEnglish
Pages (from-to)12764-12767
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number12
DOIs
Publication statusPublished - 2016 Dec 1

    Fingerprint

Keywords

  • Fermi-level pinning
  • Monolithic three-dimensional
  • Nanoscale
  • Silicon
  • Source/drain contact
  • Specific contact resistivity

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this