Continuous Room-Temperature Operation of Optically Pumped Two-Dimensional Photonic Crystal Lasers at 1.6 μm

J. K. Hwang, H. Y. Ryu, D. S. Song, I. Y. Han, Hong Kyu Park, D. H. Jang, Y. H. Lee

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

In this letter, continuous operation is realized from two-dimensional slab photonic crystal lasers at room temperature. The laser structure is prepared by wafer fusion of an InGaAsP active layer with an AlAs layer that is wet oxidized into an Al2O3 layer subsequently. The incident threshold pump power at 0.98 μm is 9.2 mW for a ∼10-μm-diameter hexagonal cavity lasing at 1.6 μm.

Original languageEnglish
Pages (from-to)1295-1297
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number10
DOIs
Publication statusPublished - 2000 Oct 1
Externally publishedYes

Fingerprint

Photonic crystals
photonics
Lasers
room temperature
crystals
lasers
Fusion reactions
Pumps
Temperature
lasing
slabs
fusion
wafers
pumps
cavities
thresholds

Keywords

  • InGaAsP-InP
  • Microcavity
  • Photonic crystal
  • Semiconductor laser
  • Wafer fusion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Continuous Room-Temperature Operation of Optically Pumped Two-Dimensional Photonic Crystal Lasers at 1.6 μm. / Hwang, J. K.; Ryu, H. Y.; Song, D. S.; Han, I. Y.; Park, Hong Kyu; Jang, D. H.; Lee, Y. H.

In: IEEE Photonics Technology Letters, Vol. 12, No. 10, 01.10.2000, p. 1295-1297.

Research output: Contribution to journalArticle

Hwang, J. K. ; Ryu, H. Y. ; Song, D. S. ; Han, I. Y. ; Park, Hong Kyu ; Jang, D. H. ; Lee, Y. H. / Continuous Room-Temperature Operation of Optically Pumped Two-Dimensional Photonic Crystal Lasers at 1.6 μm. In: IEEE Photonics Technology Letters. 2000 ; Vol. 12, No. 10. pp. 1295-1297.
@article{12f949d1c6eb4683a50e94101815188f,
title = "Continuous Room-Temperature Operation of Optically Pumped Two-Dimensional Photonic Crystal Lasers at 1.6 μm",
abstract = "In this letter, continuous operation is realized from two-dimensional slab photonic crystal lasers at room temperature. The laser structure is prepared by wafer fusion of an InGaAsP active layer with an AlAs layer that is wet oxidized into an Al2O3 layer subsequently. The incident threshold pump power at 0.98 μm is 9.2 mW for a ∼10-μm-diameter hexagonal cavity lasing at 1.6 μm.",
keywords = "InGaAsP-InP, Microcavity, Photonic crystal, Semiconductor laser, Wafer fusion",
author = "Hwang, {J. K.} and Ryu, {H. Y.} and Song, {D. S.} and Han, {I. Y.} and Park, {Hong Kyu} and Jang, {D. H.} and Lee, {Y. H.}",
year = "2000",
month = "10",
day = "1",
doi = "10.1109/68.883808",
language = "English",
volume = "12",
pages = "1295--1297",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - Continuous Room-Temperature Operation of Optically Pumped Two-Dimensional Photonic Crystal Lasers at 1.6 μm

AU - Hwang, J. K.

AU - Ryu, H. Y.

AU - Song, D. S.

AU - Han, I. Y.

AU - Park, Hong Kyu

AU - Jang, D. H.

AU - Lee, Y. H.

PY - 2000/10/1

Y1 - 2000/10/1

N2 - In this letter, continuous operation is realized from two-dimensional slab photonic crystal lasers at room temperature. The laser structure is prepared by wafer fusion of an InGaAsP active layer with an AlAs layer that is wet oxidized into an Al2O3 layer subsequently. The incident threshold pump power at 0.98 μm is 9.2 mW for a ∼10-μm-diameter hexagonal cavity lasing at 1.6 μm.

AB - In this letter, continuous operation is realized from two-dimensional slab photonic crystal lasers at room temperature. The laser structure is prepared by wafer fusion of an InGaAsP active layer with an AlAs layer that is wet oxidized into an Al2O3 layer subsequently. The incident threshold pump power at 0.98 μm is 9.2 mW for a ∼10-μm-diameter hexagonal cavity lasing at 1.6 μm.

KW - InGaAsP-InP

KW - Microcavity

KW - Photonic crystal

KW - Semiconductor laser

KW - Wafer fusion

UR - http://www.scopus.com/inward/record.url?scp=0000082631&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000082631&partnerID=8YFLogxK

U2 - 10.1109/68.883808

DO - 10.1109/68.883808

M3 - Article

AN - SCOPUS:0000082631

VL - 12

SP - 1295

EP - 1297

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 10

ER -