Abstract
In this letter, continuous operation is realized from two-dimensional slab photonic crystal lasers at room temperature. The laser structure is prepared by wafer fusion of an InGaAsP active layer with an AlAs layer that is wet oxidized into an Al2O3 layer subsequently. The incident threshold pump power at 0.98 μm is 9.2 mW for a ∼10-μm-diameter hexagonal cavity lasing at 1.6 μm.
Original language | English |
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Pages (from-to) | 1295-1297 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 12 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2000 Oct |
Externally published | Yes |
Keywords
- InGaAsP-InP
- Microcavity
- Photonic crystal
- Semiconductor laser
- Wafer fusion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering