Continuous wave operation of a 250 mW AlGaAs laser diode

T. G. Kim, D. S. Kim, K. C. Kim, K. Y. Jang, G. W. Moon, J. I. Park, S. W. Lee, M. D. Kim, J. H. Koh

Research output: Contribution to journalArticle

Abstract

We report a record high continuous wave (CW) output power of 250 mW for the 780 nm band AlGaAs laser. The selectively buried ridge (SBR) structure was used and each layer of the laser was designed to have the lowest defect density by using the deep level transient spectroscopy (DLTS) analyses. The laser operated at a peak wavelength of 783 nm with a threshold current of 38 mA. The stable fundamental transverse mode was observed at 100 mW, 70 °C for more than 3000 h. The far-field aspect ratio, a ratio of far-field vertical angle over far-field parallel angle to the junction plane, was measured to be 1.8, which is small enough for the high density CD-R system.

Original languageEnglish
Pages (from-to)1674-1677
Number of pages4
JournalSolid-State Electronics
Volume49
Issue number10
DOIs
Publication statusPublished - 2005 Oct

Keywords

  • AlGaAs
  • DLTS
  • Defect
  • High-power laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Kim, T. G., Kim, D. S., Kim, K. C., Jang, K. Y., Moon, G. W., Park, J. I., Lee, S. W., Kim, M. D., & Koh, J. H. (2005). Continuous wave operation of a 250 mW AlGaAs laser diode. Solid-State Electronics, 49(10), 1674-1677. https://doi.org/10.1016/j.sse.2005.08.007