Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD

Sungeun Park, Hyomin Park, Dongseop Kim, Junggyu Nam, Jung Yup Yang, Dongho Lee, Byoung Koun Min, Kyung Nam Kim, Se Jin Park, Seongtak Kim, Dongchul Suh, Donghwan Kim, Haeseok Lee, Yoon Mook Kang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Silicon oxynitride (SiON) could be used in combination with silicon nitride (SiN) to form a multilayer anti-reflection coating on the front side of selective emitter solar cells. In this study, these double anti-reflection layers were fabricated by a continuous deposition technique using the plasma enhanced chemical vapor deposition method. We attempted to determine whether this method is fast and cost effective and can achieve higher efficiency for solar cell manufacture. The results show that the short circuit current density for the double layer anti-reflection coating on selective emitter solar cells was higher by 0.5 mA/cm2 compared to the single layer coating owing to the improved optical reflectance. The incorporation of a SiN/SiON stack into the anti-reflection layer of the CZ selective emitter solar cells yields an energy conversion efficiency of 19.4%, which is higher than the efficiency (19.18%) for the reference solar cells with single layer SiN anti-reflection coating.

Original languageEnglish
Pages (from-to)517-521
Number of pages5
JournalCurrent Applied Physics
Volume17
Issue number4
DOIs
Publication statusPublished - 2017 Apr 1

Fingerprint

oxynitrides
Silicon
Plasma enhanced chemical vapor deposition
Silicon nitride
silicon nitrides
Solar cells
emitters
solar cells
Antireflection coatings
antireflection coatings
silicon
energy conversion efficiency
short circuit currents
Energy conversion
Short circuit currents
Conversion efficiency
Multilayers
Current density
silicon nitride
vapor deposition

Keywords

  • Anti-reflection coating
  • Selective emitter
  • Silicon oxynitride
  • Silicon solar cells
  • Stack passivation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD. / Park, Sungeun; Park, Hyomin; Kim, Dongseop; Nam, Junggyu; Yang, Jung Yup; Lee, Dongho; Min, Byoung Koun; Kim, Kyung Nam; Park, Se Jin; Kim, Seongtak; Suh, Dongchul; Kim, Donghwan; Lee, Haeseok; Kang, Yoon Mook.

In: Current Applied Physics, Vol. 17, No. 4, 01.04.2017, p. 517-521.

Research output: Contribution to journalArticle

Park, S, Park, H, Kim, D, Nam, J, Yang, JY, Lee, D, Min, BK, Kim, KN, Park, SJ, Kim, S, Suh, D, Kim, D, Lee, H & Kang, YM 2017, 'Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD', Current Applied Physics, vol. 17, no. 4, pp. 517-521. https://doi.org/10.1016/j.cap.2017.01.014
Park, Sungeun ; Park, Hyomin ; Kim, Dongseop ; Nam, Junggyu ; Yang, Jung Yup ; Lee, Dongho ; Min, Byoung Koun ; Kim, Kyung Nam ; Park, Se Jin ; Kim, Seongtak ; Suh, Dongchul ; Kim, Donghwan ; Lee, Haeseok ; Kang, Yoon Mook. / Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD. In: Current Applied Physics. 2017 ; Vol. 17, No. 4. pp. 517-521.
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