Control of a- and c-plane preferential orientations of ZnO thin films

Dae Hyung Cho, Ji Hong Kim, Byung-Moo Moon, Yeong Deuk Jo, Sang Mo Koo

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO3 and (1 0 0) SrTiO3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO3 and (1 0 0) SrTiO3. The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO3 and SrTiO3, respectively. In both cases, the degree orientation increased with increasing deposition temperature Ts. Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from Ts = 400 °C to Ts = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.

Original languageEnglish
Pages (from-to)3480-3484
Number of pages5
JournalApplied Surface Science
Volume255
Issue number6
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Thin films
Substrates
Crystalline materials
Lattice mismatch
Pulsed laser deposition
Crystal orientation
Temperature
Free energy
Electric properties
strontium titanium oxide

Keywords

  • Lattice mismatch
  • Orientation control
  • Pulsed laser deposition
  • TLM
  • X-ray diffraction
  • ZnO thin films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Control of a- and c-plane preferential orientations of ZnO thin films. / Cho, Dae Hyung; Kim, Ji Hong; Moon, Byung-Moo; Jo, Yeong Deuk; Koo, Sang Mo.

In: Applied Surface Science, Vol. 255, No. 6, 01.01.2009, p. 3480-3484.

Research output: Contribution to journalArticle

Cho, Dae Hyung ; Kim, Ji Hong ; Moon, Byung-Moo ; Jo, Yeong Deuk ; Koo, Sang Mo. / Control of a- and c-plane preferential orientations of ZnO thin films. In: Applied Surface Science. 2009 ; Vol. 255, No. 6. pp. 3480-3484.
@article{d6d1938705e54576ae84d136adb4c817,
title = "Control of a- and c-plane preferential orientations of ZnO thin films",
abstract = "We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO3 and (1 0 0) SrTiO3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO3 and (1 0 0) SrTiO3. The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO3 and SrTiO3, respectively. In both cases, the degree orientation increased with increasing deposition temperature Ts. Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from Ts = 400 °C to Ts = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.",
keywords = "Lattice mismatch, Orientation control, Pulsed laser deposition, TLM, X-ray diffraction, ZnO thin films",
author = "Cho, {Dae Hyung} and Kim, {Ji Hong} and Byung-Moo Moon and Jo, {Yeong Deuk} and Koo, {Sang Mo}",
year = "2009",
month = "1",
day = "1",
doi = "10.1016/j.apsusc.2008.09.073",
language = "English",
volume = "255",
pages = "3480--3484",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "6",

}

TY - JOUR

T1 - Control of a- and c-plane preferential orientations of ZnO thin films

AU - Cho, Dae Hyung

AU - Kim, Ji Hong

AU - Moon, Byung-Moo

AU - Jo, Yeong Deuk

AU - Koo, Sang Mo

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO3 and (1 0 0) SrTiO3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO3 and (1 0 0) SrTiO3. The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO3 and SrTiO3, respectively. In both cases, the degree orientation increased with increasing deposition temperature Ts. Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from Ts = 400 °C to Ts = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.

AB - We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO3 and (1 0 0) SrTiO3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO3 and (1 0 0) SrTiO3. The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO3 and SrTiO3, respectively. In both cases, the degree orientation increased with increasing deposition temperature Ts. Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from Ts = 400 °C to Ts = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.

KW - Lattice mismatch

KW - Orientation control

KW - Pulsed laser deposition

KW - TLM

KW - X-ray diffraction

KW - ZnO thin films

UR - http://www.scopus.com/inward/record.url?scp=57849094131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57849094131&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.09.073

DO - 10.1016/j.apsusc.2008.09.073

M3 - Article

AN - SCOPUS:57849094131

VL - 255

SP - 3480

EP - 3484

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 6

ER -