Control of a- and c-plane preferential orientations of ZnO thin films

Dae Hyung Cho, Ji Hong Kim, Byung Moo Moon, Yeong Deuk Jo, Sang Mo Koo

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 . The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO 3 and SrTiO 3 , respectively. In both cases, the degree orientation increased with increasing deposition temperature T s . Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from T s = 400 °C to T s = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.

Original languageEnglish
Pages (from-to)3480-3484
Number of pages5
JournalApplied Surface Science
Volume255
Issue number6
DOIs
Publication statusPublished - 2009 Jan 1

Keywords

  • Lattice mismatch
  • Orientation control
  • Pulsed laser deposition
  • TLM
  • X-ray diffraction
  • ZnO thin films

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Control of a- and c-plane preferential orientations of ZnO thin films'. Together they form a unique fingerprint.

Cite this