Control of current hysteresis of networked single-walled carbon nanotube transistors by a ferroelectric polymer gate insulator

Yeon Sik Choi, Jinwoo Sung, Seok Ju Kang, Sung Hwan Cho, Ihn Hwang, Sun Kak Hwang, June Huh, Ho Cheol Kim, Siegfried Bauer, Cheolmin Park

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Films made of 2D networks of single-walled carbon nanotubes (SWNTs) are one of the most promising active-channel materials for field-effect transistors (FETs) and have a variety of flexible electronic applications, ranging from biological and chemical sensors to high-speed switching devices. Challenges, however, still remain due to the current hysteresis of SWNT-containing FETs, which has hindered further development. A new and robust method to control the current hysteresis of a SWNT-network FET is presented, which involves the non-volatile polarization of a ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) gate insulator. A top-gate FET with a solution-processed SWNT-network exhibits significant suppression of the hysteresis when the gate-voltage sweep is greater than the coercive field of the ferroelectric polymer layer (≈50 MV m-1). These near-hysteresis-free characteristics are believed to be due to the characteristic hysteresis of the P(VDF-TrFE), resulting from its non-volatile polarization, which makes effective compensation for the current hysteresis of the SWNT-network FETs. The onset voltage for hysteresis-minimized operation is able to be tuned simply by controlling the thickness of the ferroelectric film, which opens the possibility of operating hysteresis-free devices with gate voltages down to a few volts. A simple and robust method is developed to control the characteristic current hysteresis of single-walled carbon nanotube (SWNT) network field-effect transistiors (FETs) by non-volatile ferroelectric polarization. A top-gate FET with a solution-processed SWNT network channel layer and a ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) gate insulator effectively suppresses the current hysteresis when the gate-voltage sweep exceeds the coercive voltage of the P(VDF-TrFE) film.

Original languageEnglish
Pages (from-to)1120-1128
Number of pages9
JournalAdvanced Functional Materials
Volume23
Issue number9
DOIs
Publication statusPublished - 2013 Mar 6
Externally publishedYes

Fingerprint

Single-walled carbon nanotubes (SWCN)
Ferroelectric materials
Hysteresis
Polymers
Transistors
transistors
carbon nanotubes
hysteresis
insulators
polymers
field effect transistors
vinylidene
Field effect transistors
fluorides
Electric potential
electric potential
Gates (transistor)
Polarization
polarization
Flexible electronics

Keywords

  • ferroelectric polymer insulators
  • field-effect transistors
  • hysteresis
  • nanocomposites
  • networked single-walled carbon nanotubes
  • poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Control of current hysteresis of networked single-walled carbon nanotube transistors by a ferroelectric polymer gate insulator. / Choi, Yeon Sik; Sung, Jinwoo; Kang, Seok Ju; Cho, Sung Hwan; Hwang, Ihn; Hwang, Sun Kak; Huh, June; Kim, Ho Cheol; Bauer, Siegfried; Park, Cheolmin.

In: Advanced Functional Materials, Vol. 23, No. 9, 06.03.2013, p. 1120-1128.

Research output: Contribution to journalArticle

Choi, Yeon Sik ; Sung, Jinwoo ; Kang, Seok Ju ; Cho, Sung Hwan ; Hwang, Ihn ; Hwang, Sun Kak ; Huh, June ; Kim, Ho Cheol ; Bauer, Siegfried ; Park, Cheolmin. / Control of current hysteresis of networked single-walled carbon nanotube transistors by a ferroelectric polymer gate insulator. In: Advanced Functional Materials. 2013 ; Vol. 23, No. 9. pp. 1120-1128.
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