Abstract
Previously, we reported that the charge injection balance in spin-coated quantum-dot light-emitting diodes (QLED) was achieved by controlling the current density characteristics via filling of the oxygen vacancies in Zinc oxide (ZnO) nanoparticles (NPs) through intense-pulsed light (IPL) posttreatment [1]. In this work, we investigated the IPL postedtreatment induced charge balance and stability of device performance prepared by the ink-jet printed QLED. Oxygen vacancies (VO) in the ZnO wurtzite structure were filled with oxygen by IPL post-treatment process in the air atmosphere, and the ink-jet printed QLED performance remained stable during the 8 day measurement period. The current efficiency (CE) and external quantum efficiency (EQE) characteristics of ink-jet printed QLED showed a tendency to stabilize from the 2nd day, and the performance of the device were 34122 cd/m2 luminance, 7.3513 cd/A CE, and 1.943 % EQE.
Original language | English |
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Pages (from-to) | 963-966 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 52 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2021 |
Event | 58th International Symposium on Digest of Technical Papers, ICDT 2021 - Virtual, Online Duration: 2021 May 17 → 2021 May 21 |
Keywords
- Ink-jet printing
- Intense-pulsed light (IPL)
- Quantum-dot light emitting diodes (QLED)
- ZnO nanoparticles (NPs)
ASJC Scopus subject areas
- Engineering(all)