Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films

Jae Ho Kim, Dae Hyun Kim, Sun Kyung Kim, Dukkyu Bae, Young Zo Yoo, Tae Yeon Seong

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We modified the refractive index (n) of TiO2 by annealing at various temperatures to obtain a high figure of merit (FOM) for TiO2/Ag/TiO2 (45 nm/17 nm/45 nm) multilayer films deposited on glass substrates. Unlike the as-deposited and 300 °C-annealed TiO2 films, the 600 °C-annealed sample was crystallized in the anatase phase. The as-deposited TiO2/Ag/as-deposited TiO2 multilayer film exhibited a transmittance of 94.6% at 550 nm, whereas that of the as-deposited TiO2/Ag/600 °C-annealed TiO2 (lower) multilayer film was 96.6%. At 550 nm, n increased from 2.293 to 2.336 with increasing temperature. The carrier concentration, mobility, and sheet resistance varied with increasing annealing temperature. The samples exhibited smooth surfaces with a root-mean-square roughness of 0.37–1.09 nm. The 600 °C-annealed multilayer yielded the highest Haacke's FOM of 193.9×10−3 Ω−1.

Original languageEnglish
Pages (from-to)14071-14076
Number of pages6
JournalCeramics International
Volume42
Issue number12
DOIs
Publication statusPublished - 2016 Sep 1

Keywords

  • Ag
  • Refractive index
  • TiO
  • Transparent conducting electrode

ASJC Scopus subject areas

  • Ceramics and Composites
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry

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