Control of spin precession in a spin-injected field effect transistor

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han, Mark Johnson

Research output: Contribution to journalArticle

372 Citations (Scopus)

Abstract

Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spinpolarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage.

Original languageEnglish
Pages (from-to)1515-1518
Number of pages4
JournalScience
Volume325
Issue number5947
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • General

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    Koo, H. C., Kwon, J. H., Eom, J., Chang, J., Han, S. H., & Johnson, M. (2009). Control of spin precession in a spin-injected field effect transistor. Science, 325(5947), 1515-1518. https://doi.org/10.1126/science.1173667