Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

Hyun Jong Park, Hong Yeol Kim, Jun Young Bae, Seonghwan Shin, Ji Hyun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalJournal of Crystal Growth
Volume350
Issue number1
DOIs
Publication statusPublished - 2012 Jul 1

Fingerprint

Vapor phase epitaxy
Hydrides
vapor phase epitaxy
hydrides
Carrier concentration
Raman spectroscopy
Aluminum Oxide
Full width at half maximum
Sapphire
sapphire
Doping (additives)
Crystalline materials
X ray diffraction
Lasers
Substrates
curves
diffraction
lasers
x rays

Keywords

  • A1. Doping
  • A3. Hydride vapor phase epitaxy
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy. / Park, Hyun Jong; Kim, Hong Yeol; Young Bae, Jun; Shin, Seonghwan; Kim, Ji Hyun.

In: Journal of Crystal Growth, Vol. 350, No. 1, 01.07.2012, p. 85-88.

Research output: Contribution to journalArticle

Park, Hyun Jong ; Kim, Hong Yeol ; Young Bae, Jun ; Shin, Seonghwan ; Kim, Ji Hyun. / Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy. In: Journal of Crystal Growth. 2012 ; Vol. 350, No. 1. pp. 85-88.
@article{848dfae685584613a1574e2bfe290698,
title = "Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy",
abstract = "Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.",
keywords = "A1. Doping, A3. Hydride vapor phase epitaxy, B1. GaN",
author = "Park, {Hyun Jong} and Kim, {Hong Yeol} and {Young Bae}, Jun and Seonghwan Shin and Kim, {Ji Hyun}",
year = "2012",
month = "7",
day = "1",
doi = "10.1016/j.jcrysgro.2011.12.029",
language = "English",
volume = "350",
pages = "85--88",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

AU - Park, Hyun Jong

AU - Kim, Hong Yeol

AU - Young Bae, Jun

AU - Shin, Seonghwan

AU - Kim, Ji Hyun

PY - 2012/7/1

Y1 - 2012/7/1

N2 - Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.

AB - Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.

KW - A1. Doping

KW - A3. Hydride vapor phase epitaxy

KW - B1. GaN

UR - http://www.scopus.com/inward/record.url?scp=84861607857&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861607857&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.12.029

DO - 10.1016/j.jcrysgro.2011.12.029

M3 - Article

VL - 350

SP - 85

EP - 88

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -