Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

Hyun Jong Park, Hong Yeol Kim, Jun Young Bae, Seonghwan Shin, Ji Hyun Kim

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5 Citations (Scopus)


Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2012 Jul 1



  • A1. Doping
  • A3. Hydride vapor phase epitaxy
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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