Abstract
The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H<inf>2</inf>O, H<inf>2</inf>S, and NH<inf>3</inf> was investigated. The H<inf>2</inf>O pretreatment on SiO<inf>2</inf> and TiO<inf>2</inf> surfaces had little effect on the nucleation of Pt. The H<inf>2</inf>S pretreatment on the SiO<inf>2</inf> and TiO<inf>2</inf> surfaces significantly delayed the nucleation of Pt on them, while the NH<inf>3</inf> pretreatment on the TiO<inf>2</inf> surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH<inf>3</inf> pretreatment. This work suggests that the pretreatment with H<inf>2</inf>S and NH<inf>3</inf> is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O<inf>3</inf>. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.
| Original language | English |
|---|---|
| Article number | 304003 |
| Journal | Nanotechnology |
| Volume | 26 |
| Issue number | 30 |
| DOIs | |
| Publication status | Published - 2015 Jul 31 |
Keywords
- atomic layer deposition
- initial growth
- nucleation behavior
- Pt
- surface pretreatment
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
- Materials Science(all)