Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment

Jung Joon Pyeon, Cheol Jin Cho, Seung Hyub Baek, Chong-Yun Kang, Jin Sang Kim, Doo Seok Jeong, Seong Keun Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H<inf>2</inf>O, H<inf>2</inf>S, and NH<inf>3</inf> was investigated. The H<inf>2</inf>O pretreatment on SiO<inf>2</inf> and TiO<inf>2</inf> surfaces had little effect on the nucleation of Pt. The H<inf>2</inf>S pretreatment on the SiO<inf>2</inf> and TiO<inf>2</inf> surfaces significantly delayed the nucleation of Pt on them, while the NH<inf>3</inf> pretreatment on the TiO<inf>2</inf> surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH<inf>3</inf> pretreatment. This work suggests that the pretreatment with H<inf>2</inf>S and NH<inf>3</inf> is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O<inf>3</inf>. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.

Original languageEnglish
Article number304003
Issue number30
Publication statusPublished - 2015 Jul 31


  • atomic layer deposition
  • initial growth
  • nucleation behavior
  • Pt
  • surface pretreatment

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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