Abstract
The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H<inf>2</inf>O, H<inf>2</inf>S, and NH<inf>3</inf> was investigated. The H<inf>2</inf>O pretreatment on SiO<inf>2</inf> and TiO<inf>2</inf> surfaces had little effect on the nucleation of Pt. The H<inf>2</inf>S pretreatment on the SiO<inf>2</inf> and TiO<inf>2</inf> surfaces significantly delayed the nucleation of Pt on them, while the NH<inf>3</inf> pretreatment on the TiO<inf>2</inf> surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH<inf>3</inf> pretreatment. This work suggests that the pretreatment with H<inf>2</inf>S and NH<inf>3</inf> is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O<inf>3</inf>. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.
| Original language | English |
|---|---|
| Article number | 304003 |
| Journal | Nanotechnology |
| Volume | 26 |
| Issue number | 30 |
| DOIs | |
| Publication status | Published - 2015 Jul 31 |
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Keywords
- atomic layer deposition
- initial growth
- nucleation behavior
- Pt
- surface pretreatment
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
- Materials Science(all)
Cite this
Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment. / Pyeon, Jung Joon; Cho, Cheol Jin; Baek, Seung Hyub; Kang, Chong-Yun; Kim, Jin Sang; Jeong, Doo Seok; Kim, Seong Keun.
In: Nanotechnology, Vol. 26, No. 30, 304003, 31.07.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment
AU - Pyeon, Jung Joon
AU - Cho, Cheol Jin
AU - Baek, Seung Hyub
AU - Kang, Chong-Yun
AU - Kim, Jin Sang
AU - Jeong, Doo Seok
AU - Kim, Seong Keun
PY - 2015/7/31
Y1 - 2015/7/31
N2 - The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H2O, H2S, and NH3 was investigated. The H2O pretreatment on SiO2 and TiO2 surfaces had little effect on the nucleation of Pt. The H2S pretreatment on the SiO2 and TiO2 surfaces significantly delayed the nucleation of Pt on them, while the NH3 pretreatment on the TiO2 surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH3 pretreatment. This work suggests that the pretreatment with H2S and NH3 is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O3. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.
AB - The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H2O, H2S, and NH3 was investigated. The H2O pretreatment on SiO2 and TiO2 surfaces had little effect on the nucleation of Pt. The H2S pretreatment on the SiO2 and TiO2 surfaces significantly delayed the nucleation of Pt on them, while the NH3 pretreatment on the TiO2 surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH3 pretreatment. This work suggests that the pretreatment with H2S and NH3 is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O3. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.
KW - atomic layer deposition
KW - initial growth
KW - nucleation behavior
KW - Pt
KW - surface pretreatment
UR - http://www.scopus.com/inward/record.url?scp=84937060992&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84937060992&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/26/30/304003
DO - 10.1088/0957-4484/26/30/304003
M3 - Article
AN - SCOPUS:84937060992
VL - 26
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 30
M1 - 304003
ER -