Control of the interface in SiC/Al composites

Jae Chul Lee; Jae Pyoung Ahn; Jae Hyeok Shim; Zhongliang Shi; Ho In Lee

doi:10.1016/S1359-6462(99)00227-4

Control of the interface in SiC/Al composites

Jae Chul Lee, Jae Pyoung Ahn, Jae Hyeok Shim, Zhongliang Shi, Ho In Lee

Research output: Contribution to journal › Article › peer-review

112 Citations (Scopus)

Abstract

Both SiC_ox2/2014Al and SiC_ox6/(Al+2 Mg) composites were prepared using SiC particles having an amorphous SiO₂ layers. When the SiC_ox2/2014Al composite is exposed at approximately 600 °C, the single SiO₂ layer formed at the SiC surface reacts with Al and Mg within the matrix alloy to form Si and MgAl₂O₄ crystals at the expense of SiO₂ layer. In the case of the SiC_ox6/(Al+2 Mg) composite, heating the composite at 610 °C resulted in the SiC surface to be completely covered with a protective interface consisted with Si and MgAl₂O₄ crystals. A combination of passive oxidation of SiC and the Mg addition into the Al matrix was efficient for forming a stable interface in the SiC/Al composite.

Original language	English
Pages (from-to)	895-900
Number of pages	6
Journal	Scripta Materialia
Volume	41
Issue number	8
DOIs	https://doi.org/10.1016/S1359-6462(99)00227-4
Publication status	Published - 1999 Aug
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/S1359-6462(99)00227-4

Cite this

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title = "Control of the interface in SiC/Al composites",

abstract = "Both SiCox2/2014Al and SiCox6/(Al+2 Mg) composites were prepared using SiC particles having an amorphous SiO2 layers. When the SiCox2/2014Al composite is exposed at approximately 600 °C, the single SiO2 layer formed at the SiC surface reacts with Al and Mg within the matrix alloy to form Si and MgAl2O4 crystals at the expense of SiO2 layer. In the case of the SiCox6/(Al+2 Mg) composite, heating the composite at 610 °C resulted in the SiC surface to be completely covered with a protective interface consisted with Si and MgAl2O4 crystals. A combination of passive oxidation of SiC and the Mg addition into the Al matrix was efficient for forming a stable interface in the SiC/Al composite.",

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T1 - Control of the interface in SiC/Al composites

AU - Lee, Jae Chul

AU - Ahn, Jae Pyoung

AU - Shim, Jae Hyeok

AU - Shi, Zhongliang

AU - Lee, Ho In

PY - 1999/8

Y1 - 1999/8

N2 - Both SiCox2/2014Al and SiCox6/(Al+2 Mg) composites were prepared using SiC particles having an amorphous SiO2 layers. When the SiCox2/2014Al composite is exposed at approximately 600 °C, the single SiO2 layer formed at the SiC surface reacts with Al and Mg within the matrix alloy to form Si and MgAl2O4 crystals at the expense of SiO2 layer. In the case of the SiCox6/(Al+2 Mg) composite, heating the composite at 610 °C resulted in the SiC surface to be completely covered with a protective interface consisted with Si and MgAl2O4 crystals. A combination of passive oxidation of SiC and the Mg addition into the Al matrix was efficient for forming a stable interface in the SiC/Al composite.

AB - Both SiCox2/2014Al and SiCox6/(Al+2 Mg) composites were prepared using SiC particles having an amorphous SiO2 layers. When the SiCox2/2014Al composite is exposed at approximately 600 °C, the single SiO2 layer formed at the SiC surface reacts with Al and Mg within the matrix alloy to form Si and MgAl2O4 crystals at the expense of SiO2 layer. In the case of the SiCox6/(Al+2 Mg) composite, heating the composite at 610 °C resulted in the SiC surface to be completely covered with a protective interface consisted with Si and MgAl2O4 crystals. A combination of passive oxidation of SiC and the Mg addition into the Al matrix was efficient for forming a stable interface in the SiC/Al composite.

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Control of the interface in SiC/Al composites

Abstract

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