Control of tunneling gap between nanocrystals by introduction of solution processed interfacial layers for wearable sensor applications

Md Ashraf Hossain, Sanghyun Jeon, Junhyuk Ahn, Hyungmok Joh, Junsung Bang, Soong Ju Oh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we introduce a strategy to introduce solution-processed interfacial layers in nanocrystal (NC) thin films to fabricate high-performance strain sensors. SiO 2 interfacial layers are chemically introduced in ligand-exchanged Ag NC thin films to increase the tunneling gap or inter-particle distance between each Ag NC. In this way, the charge-transport mechanism is manipulated, leading to unique electromechanical properties with a high gauge factor. All solution-processed strain gauge sensors with high stability, durability, and sensitivity are fabricated. The sensor successfully measured delicate movements such as finger motions, demonstrating its possible application in electronic skin.

Original languageEnglish
Pages (from-to)214-220
Number of pages7
JournalJournal of Industrial and Engineering Chemistry
Volume73
DOIs
Publication statusPublished - 2019 May 25

Fingerprint

Nanocrystals
Sensors
Thin films
Strain gages
Gages
Charge transfer
Skin
Durability
Ligands
Wearable sensors

Keywords

  • Silver nanocrystal
  • SiO interfacial layers
  • Solution process
  • Strain sensor
  • Tunneling gap

ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

Control of tunneling gap between nanocrystals by introduction of solution processed interfacial layers for wearable sensor applications. / Hossain, Md Ashraf; Jeon, Sanghyun; Ahn, Junhyuk; Joh, Hyungmok; Bang, Junsung; Oh, Soong Ju.

In: Journal of Industrial and Engineering Chemistry, Vol. 73, 25.05.2019, p. 214-220.

Research output: Contribution to journalArticle

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