Control over electrically bistable properties of layer-by-layer-assembled polymer/organometal multilayers

Sanghyuk Cheong, Younghoon Kim, Sook Won Ryu, Jinhan Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We demonstrate that nonvolatile memory devices can be prepared using electrostatic layer-by-layer (LbL)-assembled nanocomposite films, and additionally that their performance can be easily enhanced by an additional insertion of charge trap elements within the films. For this study, cationic poly(allylamine hydrochloride) (PAH) and anionic titania precursors (titanium(IV) bis(ammonium lactato) dihydroxide, TALH) were used for the preparation of electrostatic LbL-assembled nanocomposite films on a Pt-coated silicon wafer. The formed multilayer nanocomposites were converted into the transition metal oxide films (that is, TiOx nanocomposites) after thermal annealing at 450 °C, and then, the top electrodes were deposited onto the TiOx films to complete the device fabrication. When external bias was applied to the devices, these TiOx -based devices displayed bipolar resistive switching property with an ON/OFF current ratio of ∼10. However, the insertion of anionic graphene oxide (GO) nanosheets into the PAH/TALH multilayers produced GO-incorporated TiOx films after thermal annealing, which exhibited memory performance with a high ON/OFF current ratio of ∼104. Furthermore, we demonstrate that the switching mechanism of GO-incorporated TiOx devices can be explained by the charge trap model.

Original languageEnglish
Pages (from-to)481-486
Number of pages6
JournalPolymer Journal
Volume48
Issue number4
DOIs
Publication statusPublished - 2016 Apr 1

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Oxides
Graphene
Polymers
Multilayers
Nanocomposite films
Polycyclic aromatic hydrocarbons
Electrostatics
Nanocomposites
Titanium
Annealing
Data storage equipment
Nanosheets
Silicon wafers
Ammonium Compounds
Oxide films
Transition metals
Fabrication
Electrodes
Hot Temperature

ASJC Scopus subject areas

  • Polymers and Plastics
  • Materials Chemistry

Cite this

Control over electrically bistable properties of layer-by-layer-assembled polymer/organometal multilayers. / Cheong, Sanghyuk; Kim, Younghoon; Won Ryu, Sook; Cho, Jinhan.

In: Polymer Journal, Vol. 48, No. 4, 01.04.2016, p. 481-486.

Research output: Contribution to journalArticle

Cheong, Sanghyuk ; Kim, Younghoon ; Won Ryu, Sook ; Cho, Jinhan. / Control over electrically bistable properties of layer-by-layer-assembled polymer/organometal multilayers. In: Polymer Journal. 2016 ; Vol. 48, No. 4. pp. 481-486.
@article{c96dca60749e408fa23d5694ebdc90ec,
title = "Control over electrically bistable properties of layer-by-layer-assembled polymer/organometal multilayers",
abstract = "We demonstrate that nonvolatile memory devices can be prepared using electrostatic layer-by-layer (LbL)-assembled nanocomposite films, and additionally that their performance can be easily enhanced by an additional insertion of charge trap elements within the films. For this study, cationic poly(allylamine hydrochloride) (PAH) and anionic titania precursors (titanium(IV) bis(ammonium lactato) dihydroxide, TALH) were used for the preparation of electrostatic LbL-assembled nanocomposite films on a Pt-coated silicon wafer. The formed multilayer nanocomposites were converted into the transition metal oxide films (that is, TiOx nanocomposites) after thermal annealing at 450 °C, and then, the top electrodes were deposited onto the TiOx films to complete the device fabrication. When external bias was applied to the devices, these TiOx -based devices displayed bipolar resistive switching property with an ON/OFF current ratio of ∼10. However, the insertion of anionic graphene oxide (GO) nanosheets into the PAH/TALH multilayers produced GO-incorporated TiOx films after thermal annealing, which exhibited memory performance with a high ON/OFF current ratio of ∼104. Furthermore, we demonstrate that the switching mechanism of GO-incorporated TiOx devices can be explained by the charge trap model.",
author = "Sanghyuk Cheong and Younghoon Kim and {Won Ryu}, Sook and Jinhan Cho",
year = "2016",
month = "4",
day = "1",
doi = "10.1038/pj.2016.4",
language = "English",
volume = "48",
pages = "481--486",
journal = "Polymer Journal",
issn = "0032-3896",
publisher = "Nature Publishing Group",
number = "4",

}

TY - JOUR

T1 - Control over electrically bistable properties of layer-by-layer-assembled polymer/organometal multilayers

AU - Cheong, Sanghyuk

AU - Kim, Younghoon

AU - Won Ryu, Sook

AU - Cho, Jinhan

PY - 2016/4/1

Y1 - 2016/4/1

N2 - We demonstrate that nonvolatile memory devices can be prepared using electrostatic layer-by-layer (LbL)-assembled nanocomposite films, and additionally that their performance can be easily enhanced by an additional insertion of charge trap elements within the films. For this study, cationic poly(allylamine hydrochloride) (PAH) and anionic titania precursors (titanium(IV) bis(ammonium lactato) dihydroxide, TALH) were used for the preparation of electrostatic LbL-assembled nanocomposite films on a Pt-coated silicon wafer. The formed multilayer nanocomposites were converted into the transition metal oxide films (that is, TiOx nanocomposites) after thermal annealing at 450 °C, and then, the top electrodes were deposited onto the TiOx films to complete the device fabrication. When external bias was applied to the devices, these TiOx -based devices displayed bipolar resistive switching property with an ON/OFF current ratio of ∼10. However, the insertion of anionic graphene oxide (GO) nanosheets into the PAH/TALH multilayers produced GO-incorporated TiOx films after thermal annealing, which exhibited memory performance with a high ON/OFF current ratio of ∼104. Furthermore, we demonstrate that the switching mechanism of GO-incorporated TiOx devices can be explained by the charge trap model.

AB - We demonstrate that nonvolatile memory devices can be prepared using electrostatic layer-by-layer (LbL)-assembled nanocomposite films, and additionally that their performance can be easily enhanced by an additional insertion of charge trap elements within the films. For this study, cationic poly(allylamine hydrochloride) (PAH) and anionic titania precursors (titanium(IV) bis(ammonium lactato) dihydroxide, TALH) were used for the preparation of electrostatic LbL-assembled nanocomposite films on a Pt-coated silicon wafer. The formed multilayer nanocomposites were converted into the transition metal oxide films (that is, TiOx nanocomposites) after thermal annealing at 450 °C, and then, the top electrodes were deposited onto the TiOx films to complete the device fabrication. When external bias was applied to the devices, these TiOx -based devices displayed bipolar resistive switching property with an ON/OFF current ratio of ∼10. However, the insertion of anionic graphene oxide (GO) nanosheets into the PAH/TALH multilayers produced GO-incorporated TiOx films after thermal annealing, which exhibited memory performance with a high ON/OFF current ratio of ∼104. Furthermore, we demonstrate that the switching mechanism of GO-incorporated TiOx devices can be explained by the charge trap model.

UR - http://www.scopus.com/inward/record.url?scp=84962476832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962476832&partnerID=8YFLogxK

U2 - 10.1038/pj.2016.4

DO - 10.1038/pj.2016.4

M3 - Article

VL - 48

SP - 481

EP - 486

JO - Polymer Journal

JF - Polymer Journal

SN - 0032-3896

IS - 4

ER -