Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire

Kyoungwon Kim, Pulak Chandra Debnath, Dong Hoon Park, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Silver doped zinc oxide nanowires (NWs) were synthesized on (0001) sapphire substrate by hot-walled pulsed laser deposition. Both enhancement mode and depletion mode NW field effect transistors (FETs) were fabricated. The shift of threshold voltage of silver doped zinc oxide NW FET was observed from 2.45 to -3.2 V depending on the diameter of NWs without any significant changes of the subthreshold swing, carrier concentration, and on/off ratios. We demonstrate that the transfer characteristics of silver doped zinc oxide NW FETs were closely related with the size of NW diameter and control the shift of threshold voltage.

Original languageEnglish
Article number083103
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 2010 Mar 12

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controllability
threshold voltage
nanowires
field effect transistors
adjusting
zinc oxides
silver
shift
pulsed laser deposition
sapphire
depletion
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire. / Kim, Kyoungwon; Debnath, Pulak Chandra; Park, Dong Hoon; Kim, Sangsig; Lee, Sang Yeol.

In: Applied Physics Letters, Vol. 96, No. 8, 083103, 12.03.2010.

Research output: Contribution to journalArticle

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AU - Lee, Sang Yeol

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