Abstract
We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.
| Original language | English |
|---|---|
| Pages (from-to) | 117-121 |
| Number of pages | 5 |
| Journal | Organic Electronics: physics, materials, applications |
| Volume | 22 |
| DOIs | |
| Publication status | Published - 2015 Jul 1 |
Fingerprint
ASJC Scopus subject areas
- Biomaterials
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Electrical and Electronic Engineering
- Chemistry(all)
- Condensed Matter Physics
Cite this
Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene. / Park, Hyung Youl; Yoon, Jin Sang; Jeon, Jeaho; Kim, Jinok; Jo, Seo Hyeon; Yu, Hyun-Yong; Lee, Sungjoo; Park, Jin Hong.
In: Organic Electronics: physics, materials, applications, Vol. 22, 01.07.2015, p. 117-121.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene
AU - Park, Hyung Youl
AU - Yoon, Jin Sang
AU - Jeon, Jeaho
AU - Kim, Jinok
AU - Jo, Seo Hyeon
AU - Yu, Hyun-Yong
AU - Lee, Sungjoo
AU - Park, Jin Hong
PY - 2015/7/1
Y1 - 2015/7/1
N2 - We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.
AB - We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.
UR - http://www.scopus.com/inward/record.url?scp=84926158638&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84926158638&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2015.03.039
DO - 10.1016/j.orgel.2015.03.039
M3 - Article
AN - SCOPUS:84926158638
VL - 22
SP - 117
EP - 121
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
ER -