TY - JOUR
T1 - Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene
AU - Park, Hyung Youl
AU - Yoon, Jin Sang
AU - Jeon, Jeaho
AU - Kim, Jinok
AU - Jo, Seo Hyeon
AU - Yu, Hyun Yong
AU - Lee, Sungjoo
AU - Park, Jin Hong
N1 - Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2011-0007997 ) and the Human Resources Development program ( No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry and Energy .
PY - 2015/7/1
Y1 - 2015/7/1
N2 - We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.
AB - We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.
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U2 - 10.1016/j.orgel.2015.03.039
DO - 10.1016/j.orgel.2015.03.039
M3 - Article
AN - SCOPUS:84926158638
VL - 22
SP - 117
EP - 121
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
ER -