Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene

Hyung Youl Park, Jin Sang Yoon, Jeaho Jeon, Jinok Kim, Seo Hyeon Jo, Hyun-Yong Yu, Sungjoo Lee, Jin Hong Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.

Original languageEnglish
Pages (from-to)117-121
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume22
DOIs
Publication statusPublished - 2015 Jul 1

Fingerprint

Graphite
Graphene
graphene
phosphorus pentoxide
Doping (additives)
Glass
glass
air
Air
Molecules
shift
molecules
X ray photoelectron spectroscopy
adjusting
atomic force microscopy
Annealing
annealing

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene. / Park, Hyung Youl; Yoon, Jin Sang; Jeon, Jeaho; Kim, Jinok; Jo, Seo Hyeon; Yu, Hyun-Yong; Lee, Sungjoo; Park, Jin Hong.

In: Organic Electronics: physics, materials, applications, Vol. 22, 01.07.2015, p. 117-121.

Research output: Contribution to journalArticle

Park, Hyung Youl ; Yoon, Jin Sang ; Jeon, Jeaho ; Kim, Jinok ; Jo, Seo Hyeon ; Yu, Hyun-Yong ; Lee, Sungjoo ; Park, Jin Hong. / Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene. In: Organic Electronics: physics, materials, applications. 2015 ; Vol. 22. pp. 117-121.
@article{7563ddd385b0424cab3928019080377d,
title = "Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene",
abstract = "We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.",
author = "Park, {Hyung Youl} and Yoon, {Jin Sang} and Jeaho Jeon and Jinok Kim and Jo, {Seo Hyeon} and Hyun-Yong Yu and Sungjoo Lee and Park, {Jin Hong}",
year = "2015",
month = "7",
day = "1",
doi = "10.1016/j.orgel.2015.03.039",
language = "English",
volume = "22",
pages = "117--121",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",

}

TY - JOUR

T1 - Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene

AU - Park, Hyung Youl

AU - Yoon, Jin Sang

AU - Jeon, Jeaho

AU - Kim, Jinok

AU - Jo, Seo Hyeon

AU - Yu, Hyun-Yong

AU - Lee, Sungjoo

AU - Park, Jin Hong

PY - 2015/7/1

Y1 - 2015/7/1

N2 - We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.

AB - We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.

UR - http://www.scopus.com/inward/record.url?scp=84926158638&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926158638&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2015.03.039

DO - 10.1016/j.orgel.2015.03.039

M3 - Article

VL - 22

SP - 117

EP - 121

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

ER -