Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene

Hyung Youl Park, Jin Sang Yoon, Jeaho Jeon, Jinok Kim, Seo Hyeon Jo, Hyun Yong Yu, Sungjoo Lee, Jin Hong Park

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.

Original languageEnglish
Pages (from-to)117-121
Number of pages5
JournalOrganic Electronics
Publication statusPublished - 2015 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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