Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene

Hyung Youl Park, Jin Sang Yoon, Jeaho Jeon, Jinok Kim, Seo Hyeon Jo, Hyun-Yong Yu, Sungjoo Lee, Jin Hong Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.

Original languageEnglish
Pages (from-to)117-121
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume22
DOIs
Publication statusPublished - 2015 Jul 1

    Fingerprint

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this