TY - JOUR
T1 - Controllable Exchange Bias Effect in (Ga, Mn)As/(Ga, Mn)(As, P) Bilayers with Non-Collinear Magnetic Anisotropy
AU - Choi, Suho
AU - Lee, Kyung Jae
AU - Choi, Seonghoon
AU - Chongthanaphisut, Phunvira
AU - Bac, Seul Ki
AU - Lee, Sanghoon
AU - Liu, Xinyu
AU - Dobrowolska, M.
AU - Furdyna, Jacek K.
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported in part by the National Research Foundation of Korea (NRF) through the Basic Science Research Program funded by the Ministry of Education under Grant 2018R1D1A1A02042965, in part by the Ministry of Science ICT under Grant 2018R1A4A1024157, and in part by the National Science Foundation under Grant DMR 1905277.
Publisher Copyright:
© 1965-2012 IEEE.
PY - 2021/2
Y1 - 2021/2
N2 - We have investigated the exchange bias (EB) effect occurring in (Ga, Mn)As/(Ga, Mn)(As, P) bilayers, in which the (Ga, Mn)As layer has an in-plane (IP) magnetic anisotropy, and the magnetic anisotropy of the (Ga, Mn)(As, P) layer is out-of-plane (OP). Planar Hall resistance (PHR) measured during magnetization reversal in this system showed a clear shift of the hysteresis loops, indicating the presence of EB in the (Ga, Mn)As layer. The EB significantly depends on the direction of the field used in the field-cooling process. The observed EB occurring in a bilayer in which the constituent layers have orthogonal magnetic anisotropies can be understood in terms of the formation of magnetic closure domains in the (Ga, Mn)(As, P) layer during field cooling. We show that such EB can be effectively controlled by the process of field cooling, suggesting the possibility of memory device applications based on bilayer systems with orthogonal magnetic anisotropy.
AB - We have investigated the exchange bias (EB) effect occurring in (Ga, Mn)As/(Ga, Mn)(As, P) bilayers, in which the (Ga, Mn)As layer has an in-plane (IP) magnetic anisotropy, and the magnetic anisotropy of the (Ga, Mn)(As, P) layer is out-of-plane (OP). Planar Hall resistance (PHR) measured during magnetization reversal in this system showed a clear shift of the hysteresis loops, indicating the presence of EB in the (Ga, Mn)As layer. The EB significantly depends on the direction of the field used in the field-cooling process. The observed EB occurring in a bilayer in which the constituent layers have orthogonal magnetic anisotropies can be understood in terms of the formation of magnetic closure domains in the (Ga, Mn)(As, P) layer during field cooling. We show that such EB can be effectively controlled by the process of field cooling, suggesting the possibility of memory device applications based on bilayer systems with orthogonal magnetic anisotropy.
KW - Exchange bias (EB) effect
KW - magnetic anisotropy
KW - planar Hall effect (PHE)
UR - http://www.scopus.com/inward/record.url?scp=85099772117&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2020.3006876
DO - 10.1109/TMAG.2020.3006876
M3 - Article
AN - SCOPUS:85099772117
SN - 0018-9464
VL - 57
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 2
M1 - 9133138
ER -