Controllable Seebeck Coefficients of a Metal-Diffused Aluminum Oxide Layer via Conducting Filament Density and Energy Filtering

No Won Park, Dae Yun Kang, Won Yong Lee, Yo Seop Yoon, Gil Sung Kim, Eiji Saitoh, Tae Geun Kim, Sang Kwon Lee

Research output: Contribution to journalArticle

Abstract

We investigate the intrinsic thermoelectric (TE) properties of the metal-diffused aluminum oxide (AO) layer in metal/AO/metal structures, where the metallic conducting filaments (CFs) were locally formed in the structures via an electrical breakdown (EBD) process as shown by resistive switching memory devices, by directly measuring cross-plane Seebeck coefficients on the CF-containing insulating AO layers. The results showed that the Seebeck coefficients of the CF-containing AO layer in metal/AO/metal structures were influenced by the generation of the metallic CFs, which is due to the diffusion of the metal into the insulating AO layers when exposed to a temperature gradient in the direction of the cross plane of the sample. In addition, the increase in the Seebeck coefficients of the CF-containing AO layer when the number of EBD-processed patterns was increased is satisfactorily explained by the low-energy carrier (i.e., minority carriers) filtering through the metal-oxide interfacial barriers in the metal/AO/metal structures.

Original languageEnglish
Pages (from-to)23303-23312
Number of pages10
JournalACS applied materials & interfaces
Volume11
Issue number26
DOIs
Publication statusPublished - 2019 Jul 3

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Seebeck coefficient
Aluminum Oxide
Metals
Aluminum
Oxides
Thermal gradients
Data storage equipment

Keywords

  • cross-plane Seebeck coefficient
  • electrical bipolar transport
  • energy filtering
  • phonon transport
  • resistive switching memory

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Controllable Seebeck Coefficients of a Metal-Diffused Aluminum Oxide Layer via Conducting Filament Density and Energy Filtering. / Park, No Won; Kang, Dae Yun; Lee, Won Yong; Yoon, Yo Seop; Kim, Gil Sung; Saitoh, Eiji; Kim, Tae Geun; Lee, Sang Kwon.

In: ACS applied materials & interfaces, Vol. 11, No. 26, 03.07.2019, p. 23303-23312.

Research output: Contribution to journalArticle

Park, No Won ; Kang, Dae Yun ; Lee, Won Yong ; Yoon, Yo Seop ; Kim, Gil Sung ; Saitoh, Eiji ; Kim, Tae Geun ; Lee, Sang Kwon. / Controllable Seebeck Coefficients of a Metal-Diffused Aluminum Oxide Layer via Conducting Filament Density and Energy Filtering. In: ACS applied materials & interfaces. 2019 ; Vol. 11, No. 26. pp. 23303-23312.
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AU - Yoon, Yo Seop

AU - Kim, Gil Sung

AU - Saitoh, Eiji

AU - Kim, Tae Geun

AU - Lee, Sang Kwon

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N2 - We investigate the intrinsic thermoelectric (TE) properties of the metal-diffused aluminum oxide (AO) layer in metal/AO/metal structures, where the metallic conducting filaments (CFs) were locally formed in the structures via an electrical breakdown (EBD) process as shown by resistive switching memory devices, by directly measuring cross-plane Seebeck coefficients on the CF-containing insulating AO layers. The results showed that the Seebeck coefficients of the CF-containing AO layer in metal/AO/metal structures were influenced by the generation of the metallic CFs, which is due to the diffusion of the metal into the insulating AO layers when exposed to a temperature gradient in the direction of the cross plane of the sample. In addition, the increase in the Seebeck coefficients of the CF-containing AO layer when the number of EBD-processed patterns was increased is satisfactorily explained by the low-energy carrier (i.e., minority carriers) filtering through the metal-oxide interfacial barriers in the metal/AO/metal structures.

AB - We investigate the intrinsic thermoelectric (TE) properties of the metal-diffused aluminum oxide (AO) layer in metal/AO/metal structures, where the metallic conducting filaments (CFs) were locally formed in the structures via an electrical breakdown (EBD) process as shown by resistive switching memory devices, by directly measuring cross-plane Seebeck coefficients on the CF-containing insulating AO layers. The results showed that the Seebeck coefficients of the CF-containing AO layer in metal/AO/metal structures were influenced by the generation of the metallic CFs, which is due to the diffusion of the metal into the insulating AO layers when exposed to a temperature gradient in the direction of the cross plane of the sample. In addition, the increase in the Seebeck coefficients of the CF-containing AO layer when the number of EBD-processed patterns was increased is satisfactorily explained by the low-energy carrier (i.e., minority carriers) filtering through the metal-oxide interfacial barriers in the metal/AO/metal structures.

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