Controllable Switching Filaments Prepared via Tunable and Well-Defined Single Truncated Conical Nanopore Structures for Fast and Scalable SiO x Memory

Soonbang Kwon, Seonghoon Jang, Jae Wan Choi, Sanghyeon Choi, Sukjae Jang, Tae Wook Kim, Gunuk Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The controllability of switching conductive filaments is one of the central issues in the development of reliable metal-oxide resistive memory because the random dynamic nature and formation of the filaments pose an obstacle to desirable switching performance. Here, we introduce a simple and novel approach to control and form a single silicon nanocrystal (Si-NC) filament for use in SiO x memory devices. The filament is formed with a confined vertical nanoscale gap by using a well-defined single vertical truncated conical nanopore (StcNP) structure. The physical dimensions of the Si-NC filaments such as number, size, and length, which have a significant influence on the switching properties, can be simply engineered by the breakdown of an Au wire through different StcNP structures. In particular, we demonstrate that the designed SiO x memory junction with a StcNP of pore depth of ∼75 nm and a bottom diameter of ∼10 nm exhibited a switching speed of up to 6 ns for both set and reset process, significantly faster than reported SiO x memory devices. The device also exhibited a high ON-OFF ratio, multistate storage ability, acceptable endurance, and retention stability. The influence of the physical dimensions of the StcNP on the switching features is discussed based on the simulated temperature profiles of the Au wire and the nanogap size generated inside the StcNP structure during electromigration.

Original languageEnglish
Pages (from-to)7462-7470
Number of pages9
JournalNano Letters
Volume17
Issue number12
DOIs
Publication statusPublished - 2017 Dec 13

Fingerprint

Nanopores
filaments
Data storage equipment
Silicon
Nanocrystals
nanocrystals
wire
Wire
Electromigration
endurance
electromigration
controllability
silicon
Controllability
temperature profiles
Oxides
metal oxides
Durability
breakdown
Metals

Keywords

  • breakdown process
  • resistive memory
  • single nanopore structure
  • SiO
  • Switching conductive filament

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Controllable Switching Filaments Prepared via Tunable and Well-Defined Single Truncated Conical Nanopore Structures for Fast and Scalable SiO x Memory . / Kwon, Soonbang; Jang, Seonghoon; Choi, Jae Wan; Choi, Sanghyeon; Jang, Sukjae; Kim, Tae Wook; Wang, Gunuk.

In: Nano Letters, Vol. 17, No. 12, 13.12.2017, p. 7462-7470.

Research output: Contribution to journalArticle

Kwon, Soonbang ; Jang, Seonghoon ; Choi, Jae Wan ; Choi, Sanghyeon ; Jang, Sukjae ; Kim, Tae Wook ; Wang, Gunuk. / Controllable Switching Filaments Prepared via Tunable and Well-Defined Single Truncated Conical Nanopore Structures for Fast and Scalable SiO x Memory In: Nano Letters. 2017 ; Vol. 17, No. 12. pp. 7462-7470.
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AB - The controllability of switching conductive filaments is one of the central issues in the development of reliable metal-oxide resistive memory because the random dynamic nature and formation of the filaments pose an obstacle to desirable switching performance. Here, we introduce a simple and novel approach to control and form a single silicon nanocrystal (Si-NC) filament for use in SiO x memory devices. The filament is formed with a confined vertical nanoscale gap by using a well-defined single vertical truncated conical nanopore (StcNP) structure. The physical dimensions of the Si-NC filaments such as number, size, and length, which have a significant influence on the switching properties, can be simply engineered by the breakdown of an Au wire through different StcNP structures. In particular, we demonstrate that the designed SiO x memory junction with a StcNP of pore depth of ∼75 nm and a bottom diameter of ∼10 nm exhibited a switching speed of up to 6 ns for both set and reset process, significantly faster than reported SiO x memory devices. The device also exhibited a high ON-OFF ratio, multistate storage ability, acceptable endurance, and retention stability. The influence of the physical dimensions of the StcNP on the switching features is discussed based on the simulated temperature profiles of the Au wire and the nanogap size generated inside the StcNP structure during electromigration.

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