Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

Jaehui Ahn, Geunwoo Ko, Jihyun Kim, Michael A. Mastro, Jennifer Hite, Charles R. Eddy

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.

Original languageEnglish
Pages (from-to)703-707
Number of pages5
JournalCurrent Applied Physics
Volume10
Issue number2
DOIs
Publication statusPublished - 2010 Mar

Keywords

  • Alignment
  • Electric field
  • GaN
  • Nanowire

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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