Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

Jaehui Ahn; Geunwoo Ko; Jihyun Kim; Michael A. Mastro; Jennifer Hite; Charles R. Eddy

doi:10.1016/j.cap.2009.09.004

Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

Jaehui Ahn, Geunwoo Ko, Jihyun Kim, Michael A. Mastro, Jennifer Hite, Charles R. Eddy

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.

Original language	English
Pages (from-to)	703-707
Number of pages	5
Journal	Current Applied Physics
Volume	10
Issue number	2
DOIs	https://doi.org/10.1016/j.cap.2009.09.004
Publication status	Published - 2010 Mar

Keywords

Alignment
Electric field
GaN
Nanowire

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2009.09.004

Cite this

@article{1b87df22b5bf4587a2ff32cae78049ee,

title = "Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque",

abstract = "This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.",

keywords = "Alignment, Electric field, GaN, Nanowire",

author = "Jaehui Ahn and Geunwoo Ko and Jihyun Kim and Mastro, {Michael A.} and Jennifer Hite and Eddy, {Charles R.}",

note = "Funding Information: The research at Korea University was supported by BK21 program. Research at the US Naval Research Lab is partially supported by the Office of Naval Research and Office of Naval Research-Global (Grant Number N62909-09-1-4060 ).",

year = "2010",

month = mar,

doi = "10.1016/j.cap.2009.09.004",

language = "English",

volume = "10",

pages = "703--707",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

AU - Ahn, Jaehui

AU - Ko, Geunwoo

AU - Kim, Jihyun

AU - Mastro, Michael A.

AU - Hite, Jennifer

AU - Eddy, Charles R.

N1 - Funding Information: The research at Korea University was supported by BK21 program. Research at the US Naval Research Lab is partially supported by the Office of Naval Research and Office of Naval Research-Global (Grant Number N62909-09-1-4060 ).

PY - 2010/3

Y1 - 2010/3

N2 - This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.

AB - This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.

KW - Alignment

KW - Electric field

KW - GaN

KW - Nanowire

UR - http://www.scopus.com/inward/record.url?scp=70350728393&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2009.09.004

DO - 10.1016/j.cap.2009.09.004

M3 - Article

AN - SCOPUS:70350728393

VL - 10

SP - 703

EP - 707

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 2

ER -

Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this