Abstract
This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.
| Original language | English |
|---|---|
| Pages (from-to) | 703-707 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 10 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2010 Mar |
Keywords
- Alignment
- Electric field
- GaN
- Nanowire
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
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Cite this
Ahn, J., Ko, G., Kim, J., Mastro, M. A., Hite, J., & Eddy, C. R. (2010). Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque. Current Applied Physics, 10(2), 703-707. https://doi.org/10.1016/j.cap.2009.09.004