Abstract
This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.
| Original language | English |
|---|---|
| Pages (from-to) | 703-707 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 10 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2010 Mar 1 |
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Keywords
- Alignment
- Electric field
- GaN
- Nanowire
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque. / Ahn, Jaehui; Ko, Geunwoo; Kim, Ji Hyun; Mastro, Michael A.; Hite, Jennifer; Eddy, Charles R.
In: Current Applied Physics, Vol. 10, No. 2, 01.03.2010, p. 703-707.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque
AU - Ahn, Jaehui
AU - Ko, Geunwoo
AU - Kim, Ji Hyun
AU - Mastro, Michael A.
AU - Hite, Jennifer
AU - Eddy, Charles R.
PY - 2010/3/1
Y1 - 2010/3/1
N2 - This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.
AB - This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.
KW - Alignment
KW - Electric field
KW - GaN
KW - Nanowire
UR - http://www.scopus.com/inward/record.url?scp=70350728393&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70350728393&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2009.09.004
DO - 10.1016/j.cap.2009.09.004
M3 - Article
AN - SCOPUS:70350728393
VL - 10
SP - 703
EP - 707
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 2
ER -