Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures

Emre Sari, Ozgun Akyuz, Eun Geun Choi, In-Hwan Lee, Jong Hyeob Baek, Hilmi Volkan Demir

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3].

Original languageEnglish
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages289-290
Number of pages2
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: 2010 Nov 72010 Nov 11

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
CountryUnited States
CityDenver, CO
Period10/11/710/11/11

Fingerprint

optoelectronic devices
quantum efficiency
emitters
light emitting diodes
semiconductor lasers
crystals

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Sari, E., Akyuz, O., Choi, E. G., Lee, I-H., Baek, J. H., & Demir, H. V. (2010). Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 289-290). [5698873] (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698873

Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures. / Sari, Emre; Akyuz, Ozgun; Choi, Eun Geun; Lee, In-Hwan; Baek, Jong Hyeob; Demir, Hilmi Volkan.

2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 289-290 5698873 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sari, E, Akyuz, O, Choi, EG, Lee, I-H, Baek, JH & Demir, HV 2010, Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698873, 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, pp. 289-290, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 10/11/7. https://doi.org/10.1109/PHOTONICS.2010.5698873
Sari E, Akyuz O, Choi EG, Lee I-H, Baek JH, Demir HV. Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 289-290. 5698873. (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698873
Sari, Emre ; Akyuz, Ozgun ; Choi, Eun Geun ; Lee, In-Hwan ; Baek, Jong Hyeob ; Demir, Hilmi Volkan. / Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. pp. 289-290 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).
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