Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures

Emre Sari, Ozgun Akyuz, Eun Geun Choi, In Hwan Lee, Jong Hyeob Baek, Hilmi Volkan Demir

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3].

Original languageEnglish
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages289-290
Number of pages2
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: 2010 Nov 72010 Nov 11

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
CountryUnited States
CityDenver, CO
Period10/11/710/11/11

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Sari, E., Akyuz, O., Choi, E. G., Lee, I. H., Baek, J. H., & Demir, H. V. (2010). Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 289-290). [5698873] (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698873