Controlled growth of ZnSeTe superlattices with sinusoidal compositional modulation

Sang Hoon Lee, U. Bindley, J. K. Furdyna, P. M. Reimer, John R. Buschert

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

ZnSeTe superlattices were molecular beam epitaxially-grown at varying Se and Te concentrations. The MBE process of rotating the substrate in the presence of an inhomogeneous distribution of the anion flux over the substrate was investigated. The process allows to grow massive superlattices of multimicrometer thickness and with hundreds of periods without wearing the shutters.

Original languageEnglish
Pages (from-to)1518-1521
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
Publication statusPublished - 2000 May 1
Externally publishedYes

Fingerprint

Superlattices
Modulation
Molecular beams
Substrates
Molecular beam epitaxy
Negative ions
Fluxes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Controlled growth of ZnSeTe superlattices with sinusoidal compositional modulation. / Lee, Sang Hoon; Bindley, U.; Furdyna, J. K.; Reimer, P. M.; Buschert, John R.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 01.05.2000, p. 1518-1521.

Research output: Contribution to journalArticle

@article{c8e33f537e99409d86195e2c0e324cdb,
title = "Controlled growth of ZnSeTe superlattices with sinusoidal compositional modulation",
abstract = "ZnSeTe superlattices were molecular beam epitaxially-grown at varying Se and Te concentrations. The MBE process of rotating the substrate in the presence of an inhomogeneous distribution of the anion flux over the substrate was investigated. The process allows to grow massive superlattices of multimicrometer thickness and with hundreds of periods without wearing the shutters.",
author = "Lee, {Sang Hoon} and U. Bindley and Furdyna, {J. K.} and Reimer, {P. M.} and Buschert, {John R.}",
year = "2000",
month = "5",
day = "1",
doi = "10.1116/1.591417",
language = "English",
volume = "18",
pages = "1518--1521",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Controlled growth of ZnSeTe superlattices with sinusoidal compositional modulation

AU - Lee, Sang Hoon

AU - Bindley, U.

AU - Furdyna, J. K.

AU - Reimer, P. M.

AU - Buschert, John R.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - ZnSeTe superlattices were molecular beam epitaxially-grown at varying Se and Te concentrations. The MBE process of rotating the substrate in the presence of an inhomogeneous distribution of the anion flux over the substrate was investigated. The process allows to grow massive superlattices of multimicrometer thickness and with hundreds of periods without wearing the shutters.

AB - ZnSeTe superlattices were molecular beam epitaxially-grown at varying Se and Te concentrations. The MBE process of rotating the substrate in the presence of an inhomogeneous distribution of the anion flux over the substrate was investigated. The process allows to grow massive superlattices of multimicrometer thickness and with hundreds of periods without wearing the shutters.

UR - http://www.scopus.com/inward/record.url?scp=0034187384&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034187384&partnerID=8YFLogxK

U2 - 10.1116/1.591417

DO - 10.1116/1.591417

M3 - Article

AN - SCOPUS:0034187384

VL - 18

SP - 1518

EP - 1521

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -