ZnSeTe superlattices were molecular beam epitaxially-grown at varying Se and Te concentrations. The MBE process of rotating the substrate in the presence of an inhomogeneous distribution of the anion flux over the substrate was investigated. The process allows to grow massive superlattices of multimicrometer thickness and with hundreds of periods without wearing the shutters.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2000 May 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering