Controlled synthesis of single-crystalline InN nanorods

Olga Kryliouk; Hyun Jong Park; Yong Sun Won; Tim Anderson; Albert Davydov; Igor Levin; Ji Hyun Kim; Jaime A. Freitas

doi:10.1088/0957-4484/18/13/135606

Controlled synthesis of single-crystalline InN nanorods

Olga Kryliouk, Hyun Jong Park, Yong Sun Won, Tim Anderson, Albert Davydov, Igor Levin, Ji Hyun Kim, Jaime A. Freitas

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Single-crystalline InN nanorods were successfully grown on c-Al ₂O₃, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.

Original language	English
Article number	135606
Journal	Nanotechnology
Volume	18
Issue number	13
DOIs	https://doi.org/10.1088/0957-4484/18/13/135606
Publication status	Published - 2007 Apr 4

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Controlled synthesis of single-crystalline InN nanorods",

abstract = "Single-crystalline InN nanorods were successfully grown on c-Al 2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.",

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AU - Kryliouk, Olga

AU - Park, Hyun Jong

AU - Won, Yong Sun

AU - Anderson, Tim

AU - Davydov, Albert

AU - Levin, Igor

AU - Kim, Ji Hyun

AU - Freitas, Jaime A.

PY - 2007/4/4

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AB - Single-crystalline InN nanorods were successfully grown on c-Al 2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.

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Controlled synthesis of single-crystalline InN nanorods

Abstract

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