Controlled synthesis of single-crystalline InN nanorods

Olga Kryliouk, Hyun Jong Park, Yong Sun Won, Tim Anderson, Albert Davydov, Igor Levin, Ji Hyun Kim, Jaime A. Freitas

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Single-crystalline InN nanorods were successfully grown on c-Al 2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.

Original languageEnglish
Article number135606
JournalNanotechnology
Volume18
Issue number13
DOIs
Publication statusPublished - 2007 Apr 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials

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  • Cite this

    Kryliouk, O., Park, H. J., Won, Y. S., Anderson, T., Davydov, A., Levin, I., Kim, J. H., & Freitas, J. A. (2007). Controlled synthesis of single-crystalline InN nanorods. Nanotechnology, 18(13), [135606]. https://doi.org/10.1088/0957-4484/18/13/135606