Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN

Jae Seong Park; Jaecheon Han; Tae Yeon Seong

doi:10.1016/j.spmi.2014.10.009

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN

Jae Seong Park, Jaecheon Han, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10^-4 Ω cm² better than that of Ag-only contacts (1.0 × 10^-3 Ω cm²). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Original language	English
Pages (from-to)	962-967
Number of pages	6
Journal	Superlattices and Microstructures
Volume	75
DOIs	https://doi.org/10.1016/j.spmi.2014.10.009
Publication status	Published - 2014 Oct 16

Keywords

Light-emitting diode
Ohmic contact
Semi-polar GaN
Zn/Ag

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2014.10.009

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title = "Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN",

abstract = "Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.",

keywords = "Light-emitting diode, Ohmic contact, Semi-polar GaN, Zn/Ag",

author = "Park, {Jae Seong} and Jaecheon Han and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program , 10041878 , development of WPE 75% LED device process and standard evaluation technology funded by the MKE, Korea. Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd. All rights reserved. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2014",

month = oct,

day = "16",

doi = "10.1016/j.spmi.2014.10.009",

language = "English",

volume = "75",

pages = "962--967",

journal = "Superlattices and Microstructures",

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T1 - Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN

AU - Park, Jae Seong

AU - Han, Jaecheon

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program , 10041878 , development of WPE 75% LED device process and standard evaluation technology funded by the MKE, Korea. Publisher Copyright: © 2014 Elsevier Ltd. All rights reserved. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2014/10/16

Y1 - 2014/10/16

N2 - Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

AB - Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

KW - Light-emitting diode

KW - Ohmic contact

KW - Semi-polar GaN

KW - Zn/Ag

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EP - 967

JO - Superlattices and Microstructures

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SN - 0749-6036

ER -

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN

Abstract

Keywords

ASJC Scopus subject areas

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