Abstract
Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 962-967 |
| Number of pages | 6 |
| Journal | Superlattices and Microstructures |
| Volume | 75 |
| DOIs | |
| Publication status | Published - 2014 Oct 16 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Materials Science(all)
Cite this
Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN. / Park, Jae Seong; Han, Jaecheon; Seong, Tae Yeon.
In: Superlattices and Microstructures, Vol. 75, 16.10.2014, p. 962-967.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN
AU - Park, Jae Seong
AU - Han, Jaecheon
AU - Seong, Tae Yeon
PY - 2014/10/16
Y1 - 2014/10/16
N2 - Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.
AB - Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.
KW - Light-emitting diode
KW - Ohmic contact
KW - Semi-polar GaN
KW - Zn/Ag
UR - http://www.scopus.com/inward/record.url?scp=84911905015&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84911905015&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2014.10.009
DO - 10.1016/j.spmi.2014.10.009
M3 - Article
AN - SCOPUS:84911905015
VL - 75
SP - 962
EP - 967
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
ER -