Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN

Jae Seong Park, Jaecheon Han, Tae Yeon Seong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Original languageEnglish
Pages (from-to)962-967
Number of pages6
JournalSuperlattices and Microstructures
Volume75
DOIs
Publication statusPublished - 2014 Oct 16

Fingerprint

Ohmic contacts
Oxides
electric contacts
Photoelectron spectroscopy
Oxygen
X ray spectroscopy
oxides
oxygen
photoelectric emission
low resistance
spectroscopy
Electric properties
x rays
electrical properties
Annealing
electrical resistivity
annealing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN. / Park, Jae Seong; Han, Jaecheon; Seong, Tae Yeon.

In: Superlattices and Microstructures, Vol. 75, 16.10.2014, p. 962-967.

Research output: Contribution to journalArticle

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