TY - JOUR
T1 - Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al 2O3 film
AU - Kim, Joonsung
AU - Yoon, Jangyeol
AU - Na, Junhong
AU - Yee, Seongmin
AU - Kim, Gyu Tae
AU - Ha, Jeong Sook
PY - 2013/11/15
Y1 - 2013/11/15
N2 - We demonstrate the controllability of the electronic transport properties of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) via the use of 10 nm thick atomic-layer-deposited aluminum oxide (Al2O 3) gate dielectric films, where the substrate surfaces were modified with differently functionalized self-assembled monolayers (SAMs) prior to their growth, namely SAMs with hydrophobic (-CH3) or hydrophilic (-OH) groups. Al2O3 grown on a hydrophilic surface causes the SWCNT FETs to keep their intrinsic p-type transfer characteristics by alleviating the electron-doping effect originating from defects in the Al 2O3 film. However, the SAM with methyl groups increases the defect density of the Al2O3 film, enhancing the n-type transfer characteristics and inducing ambipolar to n-type behavior in the SWCNT FETs. In this work, we find clues about the distribution of charged defects in the Al2O3 film, which strongly influences the transfer characteristics of the SWCNT FETs, by measuring the thickness-dependent flat band voltages.
AB - We demonstrate the controllability of the electronic transport properties of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) via the use of 10 nm thick atomic-layer-deposited aluminum oxide (Al2O 3) gate dielectric films, where the substrate surfaces were modified with differently functionalized self-assembled monolayers (SAMs) prior to their growth, namely SAMs with hydrophobic (-CH3) or hydrophilic (-OH) groups. Al2O3 grown on a hydrophilic surface causes the SWCNT FETs to keep their intrinsic p-type transfer characteristics by alleviating the electron-doping effect originating from defects in the Al 2O3 film. However, the SAM with methyl groups increases the defect density of the Al2O3 film, enhancing the n-type transfer characteristics and inducing ambipolar to n-type behavior in the SWCNT FETs. In this work, we find clues about the distribution of charged defects in the Al2O3 film, which strongly influences the transfer characteristics of the SWCNT FETs, by measuring the thickness-dependent flat band voltages.
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U2 - 10.1088/0957-4484/24/45/455701
DO - 10.1088/0957-4484/24/45/455701
M3 - Article
C2 - 24141361
AN - SCOPUS:84886248127
VL - 24
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 45
M1 - 455701
ER -