Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al 2O3 film

Joonsung Kim, Jangyeol Yoon, Junhong Na, Seongmin Yee, Gyu Tae Kim, Jeong Sook Ha

Research output: Contribution to journalArticle

Abstract

We demonstrate the controllability of the electronic transport properties of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) via the use of 10 nm thick atomic-layer-deposited aluminum oxide (Al2O 3) gate dielectric films, where the substrate surfaces were modified with differently functionalized self-assembled monolayers (SAMs) prior to their growth, namely SAMs with hydrophobic (-CH3) or hydrophilic (-OH) groups. Al2O3 grown on a hydrophilic surface causes the SWCNT FETs to keep their intrinsic p-type transfer characteristics by alleviating the electron-doping effect originating from defects in the Al 2O3 film. However, the SAM with methyl groups increases the defect density of the Al2O3 film, enhancing the n-type transfer characteristics and inducing ambipolar to n-type behavior in the SWCNT FETs. In this work, we find clues about the distribution of charged defects in the Al2O3 film, which strongly influences the transfer characteristics of the SWCNT FETs, by measuring the thickness-dependent flat band voltages.

Original languageEnglish
Article number455701
JournalNanotechnology
Volume24
Issue number45
DOIs
Publication statusPublished - 2013 Nov 15

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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