Cu metallization for crystalline Si solar cells was investigated using either Ti or Ti/TiN diffusion barriers. The resistivity and the specific contact resistance change were measured for both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu(100 nm) contact structures under various annealing conditions. As the annealing temperature increased, the efficiency of the cells increased mainly due to the increase in fill-factor and ISC, which was correlated with the series resistance (RS) of the metal layer. The solar cells with Ti/TiN/Cu contacts generally showed the higher efficiencies than those with Ti/Cu, because in Ti/Cu contacts Cu diffused through Ti and increased RS.
- Cu metallization
- Diffusion barrier
- Si solar cells
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films