Copper metallization for crystalline Si solar cells

JaeSung You, Jinmo Kang, Donghwan Kim, James Jungho Pak, Choon Sik Kang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Cu metallization for crystalline Si solar cells was investigated using either Ti or Ti/TiN diffusion barriers. The resistivity and the specific contact resistance change were measured for both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu(100 nm) contact structures under various annealing conditions. As the annealing temperature increased, the efficiency of the cells increased mainly due to the increase in fill-factor and I SC, which was correlated with the series resistance (R S) of the metal layer. The solar cells with Ti/TiN/Cu contacts generally showed the higher efficiencies than those with Ti/Cu, because in Ti/Cu contacts Cu diffused through Ti and increased R S.

Original languageEnglish
Pages (from-to)339-345
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume79
Issue number3
DOIs
Publication statusPublished - 2003 Sep 15

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Metallizing
Copper
Solar cells
Annealing
Crystalline materials
Diffusion barriers
Contact resistance
Metals
Temperature

Keywords

  • Cu metallization
  • Diffusion barrier
  • Si solar cells
  • Ti
  • TiN

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Copper metallization for crystalline Si solar cells. / You, JaeSung; Kang, Jinmo; Kim, Donghwan; Pak, James Jungho; Kang, Choon Sik.

In: Solar Energy Materials and Solar Cells, Vol. 79, No. 3, 15.09.2003, p. 339-345.

Research output: Contribution to journalArticle

You, JaeSung ; Kang, Jinmo ; Kim, Donghwan ; Pak, James Jungho ; Kang, Choon Sik. / Copper metallization for crystalline Si solar cells. In: Solar Energy Materials and Solar Cells. 2003 ; Vol. 79, No. 3. pp. 339-345.
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