Copper thin films on PET prepared at ambient temperature by ECR-CVD

Hyungduk Ko, Junggeun Jhin, Dongjin Byun, Joongkee Lee, Dalkeun Park

Research output: Contribution to journalReview article

5 Citations (Scopus)

Abstract

Metallized polymers were prepared at ambient temperature by an electron-cyclotron-resonance (ECR) chemical vapor deposition system equipped with (-)DC bias from the Cu(hfac)2-Ar-H2 system. X-ray difraction (XRD) results showed that the Cu (111) peaks were clearly observed when H2 was introduced to the plasma. The surface morphology showed that larger Cu grains were formed in the metal-organic composite films with the introduction of H2 to the plasma. AES depth profiles showed that H2 gas introduction to the plasma led to the formation of copper-rich films with a homogeneous composition. Also, the sheet resistance was strongly dependent on the H2 content of the plasma. This means that hydrogen may lead to both the formation of stable volatile organic compounds and the reduction of copper, which influences both the crystaliographic structure and the composition of films. As a result, crystalline copper films with a sheet resistance of 2-3 Ω 2 can be prepared on poly ethylene terephthalate with the addition of H2 to the plasma.

Original languageEnglish
Pages (from-to)781-784
Number of pages4
JournalIEEE Transactions on Components and Packaging Technologies
Volume28
Issue number4
DOIs
Publication statusPublished - 2005 Dec

Keywords

  • Cu(hfac)
  • Electron-cyclotron-resonance chemical vapor deposition (ECR-CVD)
  • Plasma
  • Poly ethylene terephthalate (PET)
  • Sheet resistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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