Coprecipitation of oxygen and carbon in Czochralski silicon: A growth kinetic approach

Joo Youl Huh, U. Gösele, T. Y. Tan

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Oxygen (O) and carbon (C) coprecipitation in Czochralski Si is studied in terms of a diffusion-limited growth model. The interfacial energy increase upon C incorporation into oxide precipitates as well as the changes of O and C concentrations in the Si matrix with annealing time have been taken into account. A comparison of the model predictions with available experimental data has led to the following conclusions: (i) Regardless of the C content in the crystal, it is necessary to introduce sinks for the precipitation-induced excess Si self-interstitials (I) in the matrix for high annealing temperatures. (ii) At annealing temperatures below about 1000 °C, the enhancement effect of C on O precipitation results primarily from an increase in the precipitate density. (iii) The transition in the C precipitation behavior observed in C-rich Si crystals at annealing temperatures around 800 °C is related to a change in the availability of effective I sinks in the Si matrix at these temperatures. (iv) An enhancement of C diffusivity in the presence of excess I plays an important role in increasing the precipitate growth rate, particularly at low temperatures for which no efficient I sinks are available in the Si matrix.

Original languageEnglish
Pages (from-to)5926-5935
Number of pages10
JournalJournal of Applied Physics
Volume78
Issue number10
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

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sinks
precipitates
annealing
carbon
kinetics
silicon
oxygen
matrices
interfacial energy
temperature
augmentation
crystals
diffusivity
availability
interstitials
oxides
predictions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Coprecipitation of oxygen and carbon in Czochralski silicon : A growth kinetic approach. / Huh, Joo Youl; Gösele, U.; Tan, T. Y.

In: Journal of Applied Physics, Vol. 78, No. 10, 01.12.1995, p. 5926-5935.

Research output: Contribution to journalArticle

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AB - Oxygen (O) and carbon (C) coprecipitation in Czochralski Si is studied in terms of a diffusion-limited growth model. The interfacial energy increase upon C incorporation into oxide precipitates as well as the changes of O and C concentrations in the Si matrix with annealing time have been taken into account. A comparison of the model predictions with available experimental data has led to the following conclusions: (i) Regardless of the C content in the crystal, it is necessary to introduce sinks for the precipitation-induced excess Si self-interstitials (I) in the matrix for high annealing temperatures. (ii) At annealing temperatures below about 1000 °C, the enhancement effect of C on O precipitation results primarily from an increase in the precipitate density. (iii) The transition in the C precipitation behavior observed in C-rich Si crystals at annealing temperatures around 800 °C is related to a change in the availability of effective I sinks in the Si matrix at these temperatures. (iv) An enhancement of C diffusivity in the presence of excess I plays an important role in increasing the precipitate growth rate, particularly at low temperatures for which no efficient I sinks are available in the Si matrix.

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