Corner hole adatom stacking fault structure of Bi on Au(1 1 1)

Jeong Heum Jeon, Kyung Hoon Chung, Howon Kim, Se Jong Kahng

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Abstract

The surface atomic structure of Bi on Au(1 1 1) is studied with scanning tunneling microscopy. At about 0.5 monolayer of Bi, a well-ordered 6 × 6 atomic structure is observed. The structure has three notable features: corner holes, Bi adatoms, and stacking faults, very similar to a semiconductor surface of Si(1 1 1)-7 × 7. Out of 18 Bi surface atoms in a unit cell, six atoms are at hollow sites and are adatoms, and another six atoms are near-bridge sites. The last six atoms surround corner holes and are lower than other surface atoms by about 0.2 Å. A possible atomic model is proposed based on our observation.

Original languageEnglish
Pages (from-to)145-150
Number of pages6
JournalSurface Science
Volume603
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

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Keywords

  • Growth
  • Scanning tunneling microscopy
  • Surface structure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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