Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

Byeong Hyeon Lee; Dae Hwan Kim; Doo Yong Lee; Sungkyun Park; Sangsig Kim; Hyuck In Kwon; Sang Yeol Lee

doi:10.1007/s42341-021-00323-2

Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

Byeong Hyeon Lee, Dae Hwan Kim, Doo Yong Lee, Sungkyun Park, Sangsig Kim, Hyuck In Kwon, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.

Original language	English
Pages (from-to)	383
Number of pages	1
Journal	Transactions on Electrical and Electronic Materials
Volume	22
Issue number	3
DOIs	https://doi.org/10.1007/s42341-021-00323-2
Publication status	Published - 2021 Jun

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1007/s42341-021-00323-2

Fingerprint

Dive into the research topics of 'Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)'. Together they form a unique fingerprint.

Cite this

Lee, B. H., Kim, D. H., Lee, D. Y., Park, S., Kim, S., Kwon, H. I., & Lee, S. Y. (2021). Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). Transactions on Electrical and Electronic Materials, 22(3), 383. https://doi.org/10.1007/s42341-021-00323-2

Correction to : Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). / Lee, Byeong Hyeon; Kim, Dae Hwan; Lee, Doo Yong et al.

In: Transactions on Electrical and Electronic Materials, Vol. 22, No. 3, 06.2021, p. 383.

Research output: Contribution to journal › Comment/debate › peer-review

Lee, BH, Kim, DH, Lee, DY, Park, S, Kim, S, Kwon, HI & Lee, SY 2021, 'Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)', Transactions on Electrical and Electronic Materials, vol. 22, no. 3, pp. 383. https://doi.org/10.1007/s42341-021-00323-2

Lee BH, Kim DH, Lee DY, Park S, Kim S, Kwon HI et al. Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). Transactions on Electrical and Electronic Materials. 2021 Jun;22(3):383. doi: 10.1007/s42341-021-00323-2

Lee, Byeong Hyeon ; Kim, Dae Hwan ; Lee, Doo Yong et al. / Correction to : Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). In: Transactions on Electrical and Electronic Materials. 2021 ; Vol. 22, No. 3. pp. 383.

@article{6f5ec2eb011446b791974c78232a76a7,

title = "Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)",

abstract = "Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.",

author = "Lee, {Byeong Hyeon} and Kim, {Dae Hwan} and Lee, {Doo Yong} and Sungkyun Park and Sangsig Kim and Kwon, {Hyuck In} and Lee, {Sang Yeol}",

note = "Publisher Copyright: {\textcopyright} 2021, The Korean Institute of Electrical and Electronic Material Engineers.",

year = "2021",

month = jun,

doi = "10.1007/s42341-021-00323-2",

language = "English",

volume = "22",

pages = "383",

journal = "Transactions on Electrical and Electronic Materials",

issn = "1229-7607",

publisher = "The Korean Institute of Electrical and Electronic Material Engineers",

number = "3",

}

TY - JOUR

T1 - Correction to

T2 - Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

AU - Lee, Byeong Hyeon

AU - Kim, Dae Hwan

AU - Lee, Doo Yong

AU - Park, Sungkyun

AU - Kim, Sangsig

AU - Kwon, Hyuck In

AU - Lee, Sang Yeol

PY - 2021/6

Y1 - 2021/6

N2 - Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.

AB - Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.

UR - http://www.scopus.com/inward/record.url?scp=85104666368&partnerID=8YFLogxK

U2 - 10.1007/s42341-021-00323-2

DO - 10.1007/s42341-021-00323-2

M3 - Comment/debate

AN - SCOPUS:85104666368

SN - 1229-7607

VL - 22

SP - 383

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 3

ER -

Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this