Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2

Y. J. Seo, K. C. Kim, H. D. Kim, M. S. Joo, H. M. An, Tae Geun Kim

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We examined the origin of the charge traps in both SiO2/Si 3N4/SiO2 (ONO) and Al2O 3/Si3N4/SiO2 (ANO) structures and their effect on the memory characteristics by capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). A larger memory window was observed by C-V for ANO, due to its higher trap density. The DLTS showed that nitride traps are dominant in ANO, while more Si/SiO2 interface-related traps are observed in ONO. The ANO capacitor outperforms the ONO one in terms of both the program efficiency and retention, which is attributed to the reduced number of interface traps in ANO.

Original languageEnglish
Article number063508
JournalApplied Physics Letters
Volume93
Issue number6
DOIs
Publication statusPublished - 2008 Aug 25

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silicon oxides
nitrides
metal oxides
traps
oxides
capacitance
electrical measurement
spectroscopy
capacitors
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2 . / Seo, Y. J.; Kim, K. C.; Kim, H. D.; Joo, M. S.; An, H. M.; Kim, Tae Geun.

In: Applied Physics Letters, Vol. 93, No. 6, 063508, 25.08.2008.

Research output: Contribution to journalArticle

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