Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2

Y. J. Seo; K. C. Kim; H. D. Kim; M. S. Joo; H. M. An; T. G. Kim

doi:10.1063/1.2970990

Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al₂O₃ and SiO₂

Y. J. Seo, K. C. Kim, H. D. Kim, M. S. Joo, H. M. An, T. G. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We examined the origin of the charge traps in both SiO₂/Si ₃N₄/SiO₂ (ONO) and Al₂O ₃/Si₃N₄/SiO₂ (ANO) structures and their effect on the memory characteristics by capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). A larger memory window was observed by C-V for ANO, due to its higher trap density. The DLTS showed that nitride traps are dominant in ANO, while more Si/SiO₂ interface-related traps are observed in ONO. The ANO capacitor outperforms the ONO one in terms of both the program efficiency and retention, which is attributed to the reduced number of interface traps in ANO.

Original language	English
Article number	063508
Journal	Applied Physics Letters
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.2970990
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2",

abstract = "We examined the origin of the charge traps in both SiO2/Si 3N4/SiO2 (ONO) and Al2O 3/Si3N4/SiO2 (ANO) structures and their effect on the memory characteristics by capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). A larger memory window was observed by C-V for ANO, due to its higher trap density. The DLTS showed that nitride traps are dominant in ANO, while more Si/SiO2 interface-related traps are observed in ONO. The ANO capacitor outperforms the ONO one in terms of both the program efficiency and retention, which is attributed to the reduced number of interface traps in ANO.",

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AU - Seo, Y. J.

AU - Kim, K. C.

AU - Kim, H. D.

AU - Joo, M. S.

AU - An, H. M.

AU - Kim, T. G.

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AB - We examined the origin of the charge traps in both SiO2/Si 3N4/SiO2 (ONO) and Al2O 3/Si3N4/SiO2 (ANO) structures and their effect on the memory characteristics by capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). A larger memory window was observed by C-V for ANO, due to its higher trap density. The DLTS showed that nitride traps are dominant in ANO, while more Si/SiO2 interface-related traps are observed in ONO. The ANO capacitor outperforms the ONO one in terms of both the program efficiency and retention, which is attributed to the reduced number of interface traps in ANO.

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Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al₂O₃ and SiO₂

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